Czochralski growth of six Yb-doped double borate and silicate laser materials

Haumesser, Paul‐Henri; Gaumé, Romain; Benitez, J.M.; Viana, Bruno; Ferrand, B; Aka, G.; Vivien, D.

doi:10.1016/s0022-0248(01)01565-2

Cited by 108 publications

(58 citation statements)

References 17 publications

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“…We attempted several procedures, such as high temperature annealing during the 10 mm growth and different cooling rates to room temperature. High temperature annealing is necessary to maintain a crystal at the slightly below its melting temperature (Haumesser et al, 2001). In order to avoid cracking into the crystal we suspended crystal growth at every 10 mm step for 1 day.…”

Section: Resultsmentioning

confidence: 99%

Growth of diopside (CaMgSi2O6) single crystal by the Czochralski technique

Ito

Morioka

2006

Geochem. J.

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For the purpose of growing diopside (CaMgSi 2 O 6 ) single crystals with high quality and high homogeneity from a melt, a Czochralski method has been applied. Using this method, a colorless-transparent diopside single crystal with a composition close to stoichiometric and approximately 15 mm in diameter by 70 mm in length was grown. Chemical analyses from different portions of the crystal and unit cell parameters are in good agreement with the published data of natural diopside (Cameron et al., 1973) and synthetic diopside single crystal (Takei et al., 1982).

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Section: Resultsmentioning

confidence: 99%

Growth of diopside (CaMgSi2O6) single crystal by the Czochralski technique

Ito

Morioka

2006

Geochem. J.

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“…Also, the small quantum defect (5-15%) and high quantum efficiency reduce the thermal load and associated problems [1]. [51][52][53] and its better thermal conductivity [54]. been obtained at 1066 nm.…”

Section: Introductionmentioning

confidence: 98%

Diode-pumped frequency-doubled Yb:SYS-LBO green laser at 534 nm

Liu

2011

Laser Phys. Lett.

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A compact and efficient diode‐pumped intracavity frequency‐doubled Yb3+:SrY4(SiO4)3O (Yb:SYS) green laser at 534 nm is demonstrated. With 17.6 W of diode pump power and the frequency doubling crystal LiB3O5 (LBO), a maximum output power of 415 mW in the green spectral range at 534 nm has been achieved, corresponding to an optical‐to‐optical conversion efficiency of 2.4%; the output power stability over 4 hour is better than 3.5%. To the best of our knowledge, this is first work on intracavity frequency doubling of a diode pumped Yb:SYS laser at 1068 nm. (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA) (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)

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“…If doped with different metallic ions, these materials exhibit attractive luminescent properties for potential applications such as: plasma displays [1], laser materials [2] and high-energy phosphors [3]. Y 2 SiO 5 posseses two different crystallographic forms (X1 and X2) while Y 2 Si 2 O 7 shows up to six polymorphic forms (y, α, β, γ, δ, z).…”

Section: Introductionmentioning

confidence: 99%