CVD Mn-based self-formed barrier for advanced interconnect technology

Siew, Yong Kong; Jourdan, N.; Barbarin, Y.; Machillot, J.; Demuynck, S.; Croes, Kristof; Tseng, Jennifer F.; Ai, Hui‐wang; Tang, Ji Yue; Naik, Mehul; Wang, P.; Narasimhan, Murali K.; Abraham, Michaël; Cockburn, Andrew; Bömmels, J.; Tőkei, Zs.

doi:10.1109/iitc.2013.6615551

Cited by 8 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Mn-based self-formed barrier (SFB) is an attractive alternative technique from RC performance point of view. Previous studies based on PVD Cu-Mn alloy seed and CVD depositions of Mn from various precursors have been demonstrated alternative route for SFB formation [ 273 , 274 , 275 , 276 ]. Nogami et al from IBM [ 252 ] showed Line R cross-over point to alternative metals depends on barrier/wetting layer thickness.…”

Section: Metal Materials Interconnectmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

View full text Add to dashboard Cite

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

show abstract

Section: Metal Materials Interconnectmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Figure 3 shows a transmission electron microscopy (TEM) image of typical crevice corrosion, which happened between the copper and TaN barrier metal films and is often seen in conference papers reported by device makers. [20][21][22] One might think that this is a galvanic corrosion (it will be discussed in Sect. 9), but it also happens without the TaN film, 21,23) so it seems to occur owing to crystallographically weak points of copper films at the interface with the barrier metal film or intermetal dielectric (IMD) film.…”

Section: Crevice Corrosionmentioning

confidence: 99%

“…[20][21][22] One might think that this is a galvanic corrosion (it will be discussed in Sect. 9), but it also happens without the TaN film, 21,23) so it seems to occur owing to crystallographically weak points of copper films at the interface with the barrier metal film or intermetal dielectric (IMD) film.…”

Section: Crevice Corrosionmentioning

confidence: 99%

Electrochemical study on metal corrosion in chemical mechanical planarization process

Kondo

Ichige

Otsuka

2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Typical metal corrosions caused by the chemical mechanical planarization (CMP) process are discussed in this review paper. By categorizing them into seven kinds of corrosion, namely, chemical corrosion, crevice corrosion, crystal-orientation-dependent corrosion, narrow trench corrosion, photocorrosion, galvanic corrosion, and electrostatic-charge induced corrosion, we discuss their mechanisms and how to suppress them on the basis of electrochemical studies. Moreover, we demonstrate the usefulness of three-dimensional pH–potential diagrams for predicting corrosion issues in an actual CMP process.

show abstract

Process Technology for Copper Interconnects

Gambino¹

2018

Handbook of Thin Film Deposition

View full text Add to dashboard Cite

CVD Mn-based self-formed barrier for advanced interconnect technology

Cited by 8 publications

References 0 publications

State of the Art and Future Perspectives in Advanced CMOS Technology

State of the Art and Future Perspectives in Advanced CMOS Technology

Electrochemical study on metal corrosion in chemical mechanical planarization process

Process Technology for Copper Interconnects

Contact Info

Product

Resources

About