CuSbS2 thin film formed through annealing chemically deposited Sb2S3–CuS thin films

Rodrı́guez-Lazcano, Y.; Nair, M. T. S.; Nair, P. K.

doi:10.1016/s0022-0248(01)00672-8

Cited by 144 publications

(91 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…An early study of Rodriguez-Lazcano et al 18 reported a method to produce CuSbS 2 thin films through a solid state reaction involving thin films of Sb 2 S 3 and CuS. Rabhi et al 17 have studied the structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation and have related the effects of substrate heating conditions on these properties.…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

Dufton

Walsh

Panchmatia

et al. 2012

Phys. Chem. Chem. Phys.

144

View full text Add to dashboard Cite

As the demand for photovoltaics rapidly increases, there is a pressing need for the identification of new visible light absorbing materials for thin-film solar cells that offer similar performance to the current technologies based on CdTe and Cu(In,Ga)Se 2 . Metal sulphides are the ideal candidate materials, but their band gaps are usually too large to absorb significant fractions of visible light. However, by combining Cu + (low binding energy d 10 band) and Sb 3+ /Bi 3+ (low binding energy s 2 band), the ternary sulphides CuSbS 2 and CuBiS 2 are formed, which have been gathering recent interest for solar cell applications. Using a hybrid density functional theory approach, we calculate the structural and electronic properties of these two materials. Our results highlight the stereochemical activity of the Sb and Bi lone pair electrons, and predict that the formation of hole carriers will occur in the Cu d 10 band and hence will involve oxidation of Cu(I).

show abstract

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

Dufton

Walsh

Panchmatia

et al. 2012

Phys. Chem. Chem. Phys.

144

View full text Add to dashboard Cite

show abstract

“…Copper sulfide thin films are interesting absorber materials in thin film solar cell due to the ideal optical characteristics [17]. Furthermore, ternary chalcogenides semiconductor material, such as CuInS 2 [18,19], Cu 3 BiS 3 [20][21][22], CuSbS 2 [23] and CuGaS 2 [24] are receiving considerable attention as promising thin film absorber in photovoltaic solar cell. CuS is one of the most prevalent minor phases co-existing in these films independent from the producing techniques and play an important role both in the structural and electrical properties of the films.…”

Section: Introductionmentioning

confidence: 99%

In situ growth of CuS thin films on functionalized self-assembled monolayers using chemical bath deposition

Meng

et al. 2011

Journal of Colloid and Interface Science

View full text Add to dashboard Cite

“…However, for solar cell devices, the prime requirement is that the semiconductor used should have a band gap close to the maximum in the visible solar energy spectrum. In other words, the highest conversion efficiency is expected with a semiconductor having an optical band gap around 1.4 eV [4,5].…”

Section: Introductionmentioning

confidence: 99%

Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films

Mesa

Dussán

Gordillo

2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Cu3BiS3 thin films were prepared on soda‐lime glass substrates by co‐evaporation of the precursors in a two‐step process; for that, the metallic precursors were evaporated from tungsten crucibles in the presence of elemental sulphur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, Atomic Force Microscopy, X‐ray Photoelectron Spectroscopy, Scanning Electron Microscopy and electrical measurements to investigate the effect of growth conditions on the optical, morphological and electrical properties. The results revealed that the Cu3BiS3 films present p‐type conductivity, a high absorption coefficient (greater than 104 cm–1), and an energy band gap, Eg, of about 1.39 eV. We observed from Atomic Force Microscopy and electrical measurements that grain size and electric conductivity of the Cu3BiS3 samples are influenced by the copper mass ratio in this material. We found, in the high‐temperature range above room temperature, that carrier transport is thermally activated with activation energies fluctuating between 0.17 and 0.28 eV. This suggests that this compound has good properties to perform as absorbent layer in thin‐film solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

CuSbS2 thin film formed through annealing chemically deposited Sb2S3–CuS thin films

Cited by 144 publications

References 10 publications

Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

In situ growth of CuS thin films on functionalized self-assembled monolayers using chemical bath deposition

Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films

Contact Info

Product

Resources

About

CuSbS2 thin film formed through annealing chemically deposited Sb2S3–CuS thin films

Cited by 144 publications

References 10 publications

Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

In situ growth of CuS thin films on functionalized self-assembled monolayers using chemical bath deposition

Study of the growth process and optoelectrical properties of nanocrystalline Cu3BiS3 thin films

Contact Info

Product

Resources

About

Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films