Current-voltage characteristics of Al–SiO2–Si structures

Av‐Ron, M.; Shatzkes, M.

doi:10.1063/1.1654358

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2009

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Cited by 7 publications

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“…7 that spikelike currents appear below 5 MV/cm. As one of the causes, we can suggest a well-known ''self-healing effect'', [36][37][38] in which material is removed from the Al electrode by the breakdown and then the device returns to the low-conductivity state. Breakdowns occur at defects like pinholes in silicon oxide films.…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas

Horita

Toriyabe

Nishioka

2009

jjap

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A compact, low-height prototype of a six-axis precise positioning stage for microfabrication h a s been developed. X and Y stage positioning requires nanometer positioning resolution and robustness against atmospheric turbulence. The stiffness and dead play of the traveling mechanism were improved by using rolling contact guides, and the positioning resolution was improved by using a iriction drive mechanism. Anaiog signais from a n opticai h e a r scaie are influenced little by atmospheric turbulence. Using these advantages of the optical linear scale and with a newlv develoDed Dositioning algorithm. one-nanometer resolution was obtained.

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Section: Resultsmentioning

confidence: 99%