Current–Voltage Analysis of a-Si and a-SiGe Solar Cells Including Voltage‐dependent Photocurrent Collection

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

“…The fits to the measurements show a reasonable to excellent value of γ 0 , indicating a high quality of the optical grating in the films as well as the suitability of the technique to characterise the selection of materials. For the three silicon‐based materials, the diffusion length values are in agreement with previous work .…”

Amorphous Silicon–Based Solar Cells

“…The field becomes stronger near the p-layer. At the highest intensity, the fully collected photocurrent density is 11.5 mA/cm 2 , which is about the same as that for solar illumination neglect other aspects of power loss in the cell, which apply when field collapse may be neglected [127,128], in particular for lower intensities.…”

Impact of transparent conductive oxide front side texture on the open‐circuit voltage of a‐Si:H solar cells

“…Generally, the behavior resembles the V oc behavior but is shifted to higher illumination due to the impact of R sh . Furthermore, for very high illuminations a decrease of the FF is seen which is explained by the collapse of electric field, i.e., bias‐dependent photo carrier collection . A broad regime C range for thick solar cells deposited on HCl ZnO and SnO 2 is observed.…”

“…, information on the V oc loss origin can be gained. A dependency between R sc and J sc as seen for thick solar cells deposited on HCl ZnO or SnO 2 over the entire applied illumination indicate bias‐dependent photo carrier collection and also high quality solar cells. On the other hand, if R sc behaves independently on J sc , as seen for wide illumination ranges for thin solar cells or solar cells deposited on LPCVD ZnO and HF ZnO, it means that the JV‐ characteristics of a solar cell are dominated by low shunt resistances.…”