Abstract:Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30 nm thick, c-axis oriented α-Fe 2 O 3 Hall devices using a diamond nitrogen-vacancy (NV) center scanning microscope. Using the canted moment of α-Fe 2 O 3 as a magnetic handle on … Show more
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