Current-Induced Magnetization Reversal in High Magnetic Fields in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">o</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">u</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">o</mml:mi></mml:math>Nanopillars

Özyilmaz, Barbaros; Kent, Andrew D.; Monsma, D. J.; Sun, J. Z.; Rooks, M. J.; Koch, R. H.

doi:10.1103/physrevlett.91.067203

Cited by 144 publications

(113 citation statements)

References 22 publications

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“…The reversal process was realized when a reversal current density over J c APS→PS = 6.0ϫ 10 7 A/cm 2 ͑APS→ PS͒ was applied. It is quite remarkable that without explicitly fitting to experimental measurements, our predicted threshold current density shows an excellent agreement with experimentally measured values 4,5,9 ranging from 10 7 to 10 8 A/cm 2 . A positive current density favors the parallel alignment while a negative one leads to an antiparallel configuration.…”

Section: A Magnetization Switching and The Role Of Anisotropy And Desupporting

confidence: 64%

“…Under sufficiently high current density, spin-wave excitations are stimulated, or the magnetization of a nanoscale magnetic film can be switched. The role of STT in magnetization switching has been verified by numerous experiments in spin-valve nanopillars, [3][4][5][6][7][8][9][10] magnetic nanowires, 11,12 point-contact geometry, [13][14][15] and magnetic tunnel junctions. [16][17][18] Compared with the conventional approach to switching magnetization using a magnetic field generated by an external current line, the applications of current-induced magnetization switching ͑CIMS͒ in a magnetic random access memory ͑MRAM͒ have the advantage of large storage density, high speed, low energy consumption, and avoidance of cross writing.…”

Section: Introductionmentioning

confidence: 99%

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Micromagnetic simulations of current-induced magnetization switching in Co∕Cu∕Co nanopillars

Xiao

et al. 2007

Journal of Applied Physics

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We studied the current-induced magnetic switching in Co/ Cu/ Co nanopillars with an in-plane magnetization traversed by a perpendicular-to-plane spin-polarized current. The Landau-LifshitzGilbert equation incorporating the spin transfer torque ͑STT͒ effect was employed. Magnetization switching was found to take place when the current density exceeds a threshold. It is accompanied by drastic oscillations near the magnetic reversal point. The switching time depends on the applied current density. The magnetization can also be switched by a sufficiently long square pulsed current. The roles of anisotropy, exchange, and demagnetization energies in the magnetization switching process of nanopillars are discussed. It is shown that the switching is mainly determined by the competition between STT and the Gilbert damping torque.

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Section: A Magnetization Switching and The Role Of Anisotropy And Desupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Micromagnetic simulations of current-induced magnetization switching in Co∕Cu∕Co nanopillars

Xiao

et al. 2007

Journal of Applied Physics

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“…This ground breaking concept known as spin transfer, relies on the local interaction between a spin polarized current and the background magnetization of a ferromagnet. Spin transfer induced magnetization dynamics has been recently demonstrated experimentally in a wide variety of material systems and is rapidly reaching device maturity 3,4,5,6,7,8,9,10,11,12,13 . Furthermore, direct measurements of the magnetization dynamics 14,15,16 have shed light on the fundamental mechanism of spin transfer.…”

mentioning

confidence: 99%

Current-induced switching in single ferromagenetic layer nanopillar junctions

Özyilmaz

Kent

2006

Applied Physics Letters

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Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, a factor of 5 greater than the anisotropic magnetoresistance (AMR) effect. We present an experimentally obtained low field phase diagram of current induced magnetization dynamics in single ferromagnetic layer pillar junctions. 75.60.Jk, 75.30.Ds, 75.75.1a

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“…The polarization degree depends on the magnetization component of the PL normal to the film plane, and the magnetization is proportional to the applied field. Thus, the onset current has an inverse dependence with the applied magnetic field at low fields, as reported in several experimental studies [19,20,23,29]. Chung et al [23] recently used an expression for the onset current as a function of the field that accounts for the effect of a PL that is not aligned with the FL.…”

Section: Resultsmentioning

confidence: 90%

Effect of Temperature on Magnetic Solitons Induced by Spin-Transfer Torque

et al. 2017

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Citation: LENDINEZ, S. ... et al, 2017. Effect of temperature on magnetic solitons induced by spin-transfer torque. Physical Review Applied, 7 (5), 054027.Additional Information:• This paper was accepted for publication in the jour- Spin-transfer torques in a nanocontact to an extended magnetic film can create spin waves that condense to form dissipative droplet solitons. Here we report an experimental study of the temperature dependence of the current and applied field thresholds for droplet soliton formation, as well as the nanocontact's electrical characteristics associated with droplet dynamics. Nucleation requires lower current densities at lower temperatures, in contrast to typical spin-transfer-torque-induced switching between static magnetic states. Magnetoresistance and electrical noise measurements (10 MHz-1 GHz) show that droplet solitons become more stable at lower temperature. These results are of fundamental interest in understanding the influence of thermal noise on droplet solitons and have implications for the design of devices using the spin-transfertorque effects to create and control collective spin excitations.

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Current-Induced Magnetization Reversal in High Magnetic Fields inCo/Cu/CoNanopillars

Cited by 144 publications

References 22 publications

Micromagnetic simulations of current-induced magnetization switching in Co∕Cu∕Co nanopillars

Micromagnetic simulations of current-induced magnetization switching in Co∕Cu∕Co nanopillars

Current-induced switching in single ferromagenetic layer nanopillar junctions

Effect of Temperature on Magnetic Solitons Induced by Spin-Transfer Torque

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