Current crowding and its effect on 1/f noise and third harmonic distortion – a case study for quality assessment of resistors

Vandamme, E.P.; Vandamme, L.K.J.

doi:10.1016/s0026-2714(00)00091-3

Cited by 33 publications

(21 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If we consider the aluminum channels as a homogeneous resistor, a value for the 1/f noise parameter ␣ can be calculated from the 1/f noise from a biased sample and the relation ( f S V /V 2 )l 2 /q Rϭ␣. 16 The thicker films show a higher density compared to the thinner films. The particles are more sintered on the substrate due to the internal heat of the particles.…”

Section: Resultsmentioning

confidence: 99%

Current and voltage noise in WO3 nanoparticle films

Hoel

Vandamme

Kish

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Current and voltage noise in WO3 nanoparticle films

Hoel

Vandamme

Kish

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…14 Our samples have concentric circular source and drain electrodes which leads to radical fields between the electrodes. The inner circle with radius r 1 functions as drain, the outer circle with radius r 2 functions as source.…”

Section: On Calculating the Resistance And ␣ In Radial Fieldsmentioning

confidence: 99%

“…4 -6. Our aim is to test if 1/f can be used as a diagnostic tool for device quality assessment. In most conductive materials submitted to homogeneous fields one observes a 1/f noise if the number of free carriers is less than 10 14 . According to Hooge's empirical relation under constant voltage conditions, the current fluctuations S I /I 2 are for homogeneous samples submitted to homogeneous fields…”

Section: Introductionmentioning

confidence: 99%

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Vandamme

Feyaerts

Trefán

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

We investigate low frequency conductivity noise in the drain-source channel of organic material field-effect transistors by measuring the spectra of current fluctuations for several values of the gate voltage V gs and drain voltage V ds and find that it is 1/f . The samples are biased in the ohmic range of the applied V ds . The relative current 1/f noise is inversely proportional to the charge carrier numbers N generated by illumination or by varying the gate-source voltage. Hooge's empirical relation for the 1/f noise is validated for these organic semiconductors with an ␣Х0.01 for poly-thienylene vinylene and about 100 for pentacene thin film transistors. From geometry dependence of the noise we conclude that series resistance can be ignored for poly-thienylene vinylene field-effect transistors. However, some pentacene samples suffer from a noisy series resistance to the channel resistance. From the 1/f noise dependence on geometry and gate voltage bias we conclude that it can be used as a diagnostic tool for device quality assessment.

show abstract

“…It is important to note that these power law behaviors are only universal near percolative threshold p c , even though effective power law behavior is often observed over a wide range. The essential insight to be gained from the connection to percolation models is that the Pn-TFT's noise is correlated with the distribution of the conducting elements which could also cause current crowding and concomitant increases in noise 20,26 . As seen in Figure 1, the most prominent defect in a pentacene thin film is a grain boundary and therefore the most likely mechanism for the mobility dependence of Hooge's parameter is transport across these boundaries.…”

mentioning

confidence: 99%

Percolative effects on noise in pentacene transistors

Conrad

Cullen

Yan

et al. 2007

Applied Physics Letters

View full text Add to dashboard Cite

Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.

show abstract

Current crowding and its effect on 1/f noise and third harmonic distortion – a case study for quality assessment of resistors

Cited by 33 publications

References 12 publications

Current and voltage noise in WO3 nanoparticle films

Current and voltage noise in WO3 nanoparticle films

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Percolative effects on noise in pentacene transistors

Contact Info

Product

Resources

About