Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

Abstract

Articles you may be interested inResistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications Evolution of RESET current and filament morphology in low-power HfO 2 unipolar resistive switching memory Appl. Phys. Lett. 98, 103511 (2011); 10.1063/1.3565239Pulse-induced low-power resistive switching in Hf O 2 metal-insulator-metal diodes for nonvolatile memory applicationsIn this article, the current conduction and resistive switching (RS) behavior in flexible Sm 2 O 3 and Lu 2 O 3 resistive random access memories (ReRAM) are investigated. Amorphous Sm 2 O 3 and Lu 2 O 3 thin films were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural morphologies of the Sm 2 O 3 and Lu 2 O 3 thin films strongly depend on the lattice energy of the oxides. The dominant current conduction mechanism in the oxide layer changes from electrode control Schottky emission in Sm 2 O 3 to bulk controlled space-charge-limited-current in Lu 2 O 3 . The barrier height extracted from Schottky emission model is 0.96 eV in Sm 2 O 3 thin film, while the activation energy of traps calculated from the Arrhenius plots is about 0.23 eV in Lu 2 O 3 thin film. Additionally, the Ni/Sm 2 O 3 /ITO flexible memory device shows promising RS behavior with very low power of operation ($30 lW) and small distribution of switching parameters. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising for future memory applications. The filament conduction model is adopted to describe the RS behavior in the Sm 2 O 3 and Lu 2 O 3 ReRAM devices. The improved RS performance in Sm 2 O 3 thin film is attributed to the different physical properties of the thin films. V C 2014 AIP Publishing LLC.

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

“…Hence, the existence of Schottky emission can be ascertained by fitting to two functions, which are: (i) ln(J/T 2 ) ∝ 1/T under fixed electric field; and (ii) ln(J) ∝ E 1/2 under fixed temperature. There are numerous published resistive switching devices that suggested Schottky emission as the dominant conduction mechanism, such as [33][34][35][36][37][38][39][40][41][42], etc. The combination of electrodes and materials of these works is listed in Table 3.…”

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

“…As a result of this interest, there are an increasing number of technological applications that rely upon rare earth oxides (REO) and the related rare earth complex oxides. The focus of this work, Sm 2 O 3 , has shown great promise in applications as diverse as a high-k dielectric [1,2,3,4,5,6], ReRAM dielectric [7,8,9,10], catalyst [11,12,13], sensors [14,15], and as a dopant in a number of optically important glasses [16,17,18].…”

“…The most promising electronic device applications for Sm 2 O 3 have been found in metal-oxide-semiconductor (MOS) and ReRAM devices. [1,2,3,4,5,6,7,8,9,10] Historically, silicon dioxide (SiO 2 ) has been employed as a gate oxide layer on silicon substrate for reasons of both performance and ease of processing. The miniaturization of devices has driven the need for high-k dielectrics, physically thicker layers with the same electrical equivalent thickness.…”

Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface

“…1,2 Typically these devices are based upon oxides, with interest being focused on a variety of transition metal, rare earth and main group oxides, with varying degrees of success. [1][2][3][4] Regardless of the choice of dielectric, ReRAM devices operate by the field induced switching between a high resistance state (HRS) and a low resistance state (LRS). During the forming process a conductive filament (CF) is created, the character of which is dependant upon device type.…”