MRS Proc. 1998 DOI: 10.1557/proc-537-g3.9 View full text
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Yuichi Hiroyama, Masao Tamura

Abstract: We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2, gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of β-GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h (a Ga-cell tempera…

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