Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O₃ Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition

Abstract

(111)c- and (100)c-oriented SrRuO3 films were successfully grown on (111)Pt/TiO2/SiO2/(100)Si and (100)LaNiO3/(111)Pt/TiO2/SiO2/(100)Si substrates, respectively, by RF-magnetron sputtering method. On these (111)c- and (100)c-oriented SuRuO3 films, (111)- and (001)/(100)-oriented fiber-textured Pb(Zr0.35Ti0.65)O3 films with 2.0 µm in thickness were grown by metalorganic chemical vapor deposition (MOCVD). Well-saturated polarization-electric field (P-E) hysteresis loops were observed for both films. The remanent polarization (P r) values of (111)- and (001)/(100)-oriented 2.0 µm-thick Pb(Zr,Ti)O3 (PZT) films were almost the same at approximately 45 µC/cm2 at 200 kV/cm, while the coercive field (E c) values of these films were slight different at 61 kV/cm and 71 kV/cm, respectively. Moreover, the field-induced strains measured by scanning probe microscopy were also almost the same at approximately 0.2% up to 100 kV/cm. These data show the crystal orientation independence of the remanent polarization and field-induced strain of Pb(Zr0.35Ti0.65)O3 films.

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3films grown on (100) Si substrates by metal organic chemical vapor deposition

“…The growth conditions and thickness of each layer were already reported. [24][25][26] Here, the pseudocubic symmetric index designated as (hkl) c was used for SrRuO 3 and LaNiO 3 .…”

Squarness Control in Polarization-electric filed Curves in Rhombohedral PZT Films

“…The composition of the films was adjusted by controlling the input gas flow rate of the source gases. (100)SrRuO 3 //(100)SrTiO 3 and (100)SrRuO 3 // (100)LaNiO 3 //(100)CeO 2 //(100)YSZ//(100)Si were used for epitaxial film growth, while (100)SrRuO 3 /(100)LaNiO 3 / (111)Pt/(100)SrTiO 3 and (100)SrRuO 3 /(100)LaNiO 3 / (111)Pt/TiO 2 /(100)Si for the (100) fiber-textured ones [9,10]. Psudocubic index was used for the description of crystal structure of SrRuO 3 .…”

Orientation Dependence of Epitaxial and One-Axis-Oriented (Ba0.5Sr0.5)TiO3 Films Prepared by RF Magnetron Sputtering

“…The films obtained were annealed at 500 C in atmospheric O 2 flow for 30 min. Epitaxial SrRuO 3 films 100 nm thick were deposited on (100) and 111 7,13) The crystal structure of the films was characterized by X-ray diffraction (XRD). The composition of the films was ascertained using a wavelength dispersion X-ray fluorescence (XRF) spectrometer.…”