“…1–8 This technique has great potential in practical applications because it can be integrated by thin-film photoelectrodes of photocathode and photoanode that act as a device with a self-biased independent structure. 9,10 Among the candidate materials for the photoanode, n-type semiconductor materials, such as TiO 2 , 11,12 ZnO, 13 BiVO 4 , 14–17 WO 3 , 18,19 Fe 2 O 3 , 20,21 and Ta 3 N 5 , 22 have been widely used as photoanodes. BiVO 4 in particular has attracted extensive attention due to its suitable band gap (2.4 eV with 10% theoretical photo-to-hydrogen conversion efficiency) and a reasonable energy band structure.…”