MRS Proc. 2000 DOI: 10.1557/proc-610-b3.8 View full text
Atsushi Murakoshi, Kyoichi Suguro, Masao Iwase, Mitsuhiro Tomita, Katsuya Okumura

Abstract: AbstractWe propose a novel process module by using cryo-implantation and rapid thermal annealing (RTA). Boron or arsenic ions were implanted into a 8 inch (100) Si substrate which was cooled by using liquid nitrogen. The substrate temperature was controlled to be below at -160°C during ion implantation. It was found that an amorphous layer was formed by boron or arsenic implantation and the amorphous layer was completely recovered to a single crystal after annealing at 900°C for 30sec. No dislocation was obser…

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