Corrigendum to“ Investigating In2S3 as the buffer layer in CZTSSe solar cells using simulation and experimental approaches” [Solid State Commun. Vol. 343 (2022): 114654]

Improvement of Performance of Cu2ZnSn(S, Se)4 Solar Cells by Low‐Temperature Annealing of B‐Doped CdS

“…Kesterite CZTSSe thin-film solar cells have attracted great interest as potential substitutes for efficient solar devices such as Cu(In, Ga)Se 2 (CIGS) thin-film solar cells, due to their inherent merits such as tunable direct bandgap (1.0-1.5 eV), Earthabundant and nontoxic elements, and a high absorption coefficient (>10 4 cm À1 ). [1][2][3][4][5] Nevertheless, the highest certified power conversion efficiency (PCE) (14.9%) of CZTSSe based solar cells is still lower than that of its counterpart CIGS(23.35%) up to now. [6][7][8][9] Many literatures have demonstrated that the major bottleneck restricting the PCE of kesterite-based CZTSSe solar cell is the low open circuit voltage (V oc ) and low fill factor (FF), which are considered to be mainly attributed to high recombination rate in CZTSSe bulk and at CdS/CZTSSe and CZTSSe/Mo interfaces.…”