Corrigendum to “A simple route to deposit SiO2 film with resistivity >109 Ω·μm” [Mater. Lett. 211 (2018) 277–280]

Probing the active sites of oxide encapsulated electrocatalysts with controllable oxygen evolution selectivity

“…Calculated resistivities ranged from 6.1 AE 0.3 Â 10 6 O cm at 2 nm thickness to 3.9 AE 0.7 Â 10 8 O cm at 9 nm thickness, with an average resistivity of 7.8 AE 5.4 Â 10 8 O cm for TiO x thicknesses above 5 nm. While the electronic resistivity of oxide coatings can vary highly depending on the material synthesis and crystallinity, [45][46][47][48][49][50][51] the average resistivities for overlayers thicker than 3 nm are still orders of magnitude lower than those for bulk crystalline SiO 2 52,53 and TiO 2 . [54][55][56][57] The lower resistivity of oxide overlayers used in this study can most likely be attributed to the highly defective, amorphous nature of overlayers deposited by the low temperature photochemical deposition process (Fig.…”