Correlative microscopy combining transmission electron microscopy and secondary ion mass spectrometry: A general review on the state-of-the-art, recent developments, and prospects

Abstract

The development of advanced materials relies crucially on the availability of suitable high-resolution analytical characterization techniques. In this review, we discuss correlative microscopy methods combining Transmission Electron Microscopy (TEM) and Secondary Ion Mass Spectrometry (SIMS) for high-resolution high-sensitivity analysis. We review the literature on ex-situ TEM-SIMS correlation in materials science and beyond and motivate the need for in-situ TEM-SIMS. The instrument development aspects are discussed in detail followed by a computational analysis of the fundamental ion-solid interaction relevant for TEM-SIMS correlation. The correlative methodology and workflow are presented in detail together with a discussion on potential artifacts. Then, the strategies to enhance the performance characteristics such as the SIMS image resolution and sensitivities are discussed followed by example applications of the in-situ TEM-SIMS technique. Finally, the prospects of the TEM-SIMS correlative technique for solving challenging characterization problems are explored.

Application of FIB-SEM Techniques for the Advanced Characterization of Earth and Planetary Materials

“…However, comprehensive in situ analysis remains challenged by the different requirements of various instrument platforms and sample preparation. Motivated by the new analytical possibilities, the Parallel Ion Electron Spectrometry (PIES) instrument integrated with FIB, TEM, and SIMS in a single system was recently built by Eswara [ 109 , 110 ]. This technique can offer high-resolution imaging and high-sensitivity analysis of elements, which may have many application prospects in studying the microstructure of materials and minerals.…”

Secondary Ion Mass Spectrometry (SIMS) and Atom Probe Tomography (APT): Powerful Synergetic Techniques for Materials Scientists

“…Hugues Francois-Saint-Cyr 1 , Isabelle Martin 1 , Paula Peres 2 , Christelle Guillermier 3 , Ty Prosa 1 , Wilfried Blanc 4 and David Larson 1 1 CAMECA Instruments Inc., Madison, Wisconsin, United States, 2 CAMECA S.A., Gennevilliers, Ile-de-France, France, 3 ZEISS SMT Inc., Peabody, Massachusetts, United States, 4 Université Nice-Sophia Antipolis, Nice, Provence-Alpes-Cote d'Azur, France Engineers and scientists in both academic and industrial environments currently rely on a fleet of analytical methods to gain full understanding on technologies and processes, or to explore novel research ideas. However, all the characterization techniques populating the resolution-sensitivity landscape have their own strengths and shortcomings [1]. It is in this context that using a synergetic approach between two complementary techniques such as Secondary Ion Mass Spectrometry (SIMS) and Atom Probe Tomography (APT) could magnify the power of these techniques.…”

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

“…To overcome the SIMS image resolution limit, the SIMS images can be correlated with another high-resolution imaging technique such as TEM to reveal valuable insights related to the local nanoscale structure. [5,6,19,20] Conclusions A method to rapidly and quantitatively image dopant distribution using SIMS is demonstrated. The method is based on the cross-section analysis of a reference sample with a known concentration profile.…”