Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD

Lelièvre, Jean‐François; Torre, J. de la; Kaminski, A.; Brémond, G.; Lemiti, M.; Bouayadi, R. El; Araújo, D.; Épicier, Thierry; Monna, R.; Pirot, M.; Ribeyron, P.J.; Jaussaud, C.

doi:10.1016/j.tsf.2005.12.136

Cited by 27 publications

(30 citation statements)

References 11 publications

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“…When comparing SiN obtained with different deposition techniques, the complete complex optical index N = n + ik should be taken into account. Indeed, the extinction coefficient k at low wavelengths gives reliable information on the Si-content of the SiN layer, as we have already suggested elsewhere [43,44].…”

Section: Sin Stoichiometry and Hydrogen Desorption A Sin Stoichiometrysupporting

confidence: 59%

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Lelièvre

Fourmond

Kaminski

et al. 2009

Solar Energy Materials and Solar Cells

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152

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Section: Sin Stoichiometry and Hydrogen Desorption A Sin Stoichiometrysupporting

confidence: 59%

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Lelièvre

Fourmond

Kaminski

et al. 2009

Solar Energy Materials and Solar Cells

Self Cite

152

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“…The systematic shift of the PL peak energy shown in Fig. 2a suggests that the Si QDs can be formed in silicon-rich silicon nitride (SRSN) films at low temperature when SiH 4 and NH 3 gases are used [13]. Two types of luminescent mechanisms, such as radiative defects in the film and the quantum confinement effect (QCE) in Si QDs have been proposed to explain the origin of light emission from these composite structures.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices

Rezgui

Sibaï

Nychyporuk

et al. 2009

Journal of Luminescence

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“…However, it also turns out that N-rich nitride [2-4] and Si-rich nitride thin films containing amorphous [5-8] or crystalline [9-14] Si-np or without Si-np [15-18] can exhibit PL in the same spectral range. As a result, the mechanism of the PL in Si nitride is still a controversial subject in the literature.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characterization of pure Si-rich nitride thin films

et al. 2013

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The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

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Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD

Cited by 27 publications

References 11 publications

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices

Structural and optical characterization of pure Si-rich nitride thin films

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