Correlation of grain size, phase transition and piezoelectric properties in Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

Sun, Hailing; Zheng, Qiaoji; Wan, Yang; Chen, Y.; Wu, Xiaodong; Kwok, Kin Wing; Chan, Helen Lai Wa; Lin, Dunmin

doi:10.1007/s10854-015-3063-7

Cited by 21 publications

(8 citation statements)

References 43 publications

(49 reference statements)

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“…The variation of grain size with T s is not consistent with Ref. , in which the grain size increases monotonously with increasing T s . The exact reason is not clear for the present ceramics.…”

Section: Resultscontrasting

confidence: 78%

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi_0.984Er_0.016Na)_0.5TiO₃–0.06BaTiO₃ by optimizing sintering temperature/dwell time

Lei

Zou

Wen

et al. 2015

Physica Status Solidi (a)

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Multifunctional ceramics of 0.94(Bi0.984Er0.016Na)0.5TiO3–0.06BaTiO3 were prepared by a conventional ceramic technique. The effects of sintering temperature (Ts) and dwell time (ts) on the ferroelectricity, piezoelectricity, and fluorescence of the ceramics were studied. Furthermore, the influence of poling electrical field on the up‐conversion emission intensities was also discussed. As Ts and ts increase, the grains grow larger gradually and evolve from spheroid to rectangular shape. By increasing Ts and ts, the ferroelectricity of the ceramics is improved and the remnant polarization Pr increases. The optimum sintering temperature and dwell time for the piezoelectricity of ceramics are 1200 °C and 2 h, respectively. Also, both of the sintering temperature and dwell time make an important influence on the fluorescence of the ceramics. The ceramics sintered at 1140–1160 °C for 2 h possess excellent up/down‐conversion fluorescence. The up‐conversion emission intensity of the ceramics is further enhanced by optimizing poling electric field. This work develops a kind of multifunctional material that simultaneously possesses good ferroelectricity/piezoelectricity and excellent up/down‐conversion fluorescence by optimizing sintering temperature and dwell time.

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Section: Resultscontrasting

confidence: 78%

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi_0.984Er_0.016Na)_0.5TiO₃–0.06BaTiO₃ by optimizing sintering temperature/dwell time

Lei

Zou

Wen

et al. 2015

Physica Status Solidi (a)

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“…As a result, the R‐O phase boundary was more diffuse in the textured samples than in the nontextured samples. It is worth noting that the grain size may have directly/indirectly affected the phase transitions around the morphotropic phase boundaries, as was previously reported 47−49 . Therefore, the reduced grain size of the textured samples (Figure 1) may have also contributed to the stabilization of the phase coexistence in a broader range of the Sm content in these samples.…”

Section: Resultssupporting

confidence: 56%

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

Qiu

Zhang

et al. 2020

J Am Ceram Soc

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The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi1‐xSmxFeO3 thin films (near the rhombohedral‐orthorhombic (R‐O) phase boundary, that is, x = 0, 0.1, 0.12, 0.14, and 0.16) were fabricated using the sol‐gel process by introducing a LaNiO3 (LNO) seed layer. Structural and ferroelectric characterizations were used to investigate the effect of texturing on the Sm doping‐induced R‐O phase transition of the BiFeO3 thin films. It was found that a phase transition occurred from the rhombohedral to the orthorhombic structure with increasing Sm content in the nontextured polycrystalline films, resulting in an R‐O phase boundary at x = 0.12. In contrast, the R‐O phase boundary in the textured films was more diffuse, indicating a two‐phase coexistence in a boarder range of Sm doping levels (x = 0.12‐0.16). This discrepancy was attributed to the complexity of the stress status in thin films. The dielectric and electrical properties of the nontextured and textured samples were investigated. The current study shows that the phase boundary in ferroelectric thin films can be altered by diverse means, thus providing insights into potential applications.

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“…2b. For the ceramic without an electric field (E = 0), it is characterized by the obvious (200) T and (200) R peaks, which indicates that the coexistence of tetragonal and rhombohedral phases (even including an intermediate orthorhombic sub-phase (002)) at room temperature40. Under an electric field of 0.2 kV/mm, the (200) T peak shrinks and becomes similar in size to the (200) R peak (Fig.…”

Section: Resultsmentioning

confidence: 95%

“…2a). Regarding the fact that the BCTZ ceramic derives from MPB with the coexistence of tetragonal (P4mm) and rhombohedral phases (R3m) around room temperature2640, there is no visible evidence of the splitting of (200) peak at 2θ~45° (Fig. 2a).…”

Section: Resultsmentioning

confidence: 99%

In-situ Electric Field-Induced Modulation of Photoluminescence in Pr-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 Lead-Free Ceramics

Sun

Chung

et al. 2016

Sci Rep

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Luminescent materials with dynamic photoluminescence activity have aroused special interest because of their potential widespread applications. One proposed approach of directly and reversibly modulating the photoluminescence emissions is by means of introducing an external electric field in an in-situ and real-time way, which has only been focused on thin films. In this work, we demonstrate that real-time electric field-induced photoluminescence modulation can be realized in a bulk Ba0.85Ca0.15Ti0.90Zr0.10O3 ferroelectric ceramic doped with 0.2 mol% Pr3+, owing to its remarkable polarization reversal and phase evolution near the morphotropic phase boundary. Along with in-situ X-ray diffraction analysis, our results reveal that an applied electric field induces not only typical polarization switching and minor crystal deformation, but also tetragonal-to-rhombohedral phase transformation of the ceramic. The electric field-induced phase transformation is irreversible and engenders dominant effect on photoluminescence emissions as a result of an increase in structural symmetry. After it is completed in a few cycles of electric field, the photoluminescence emissions become governed mainly by the polarization switching, and thus vary reversibly with the modulating electric field. Our results open a promising avenue towards the realization of bulk ceramic-based tunable photoluminescence activity with high repeatability, flexible controllability, and environmental-friendly chemical process.

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Correlation of grain size, phase transition and piezoelectric properties in Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

Cited by 21 publications

References 43 publications

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi_0.984Er_0.016Na)_0.5TiO₃–0.06BaTiO₃ by optimizing sintering temperature/dwell time

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi_0.984Er_0.016Na)_0.5TiO₃–0.06BaTiO₃ by optimizing sintering temperature/dwell time

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

In-situ Electric Field-Induced Modulation of Photoluminescence in Pr-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 Lead-Free Ceramics

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Correlation of grain size, phase transition and piezoelectric properties in Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

Cited by 21 publications

References 43 publications

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi0.984Er0.016Na)0.5TiO3–0.06BaTiO3 by optimizing sintering temperature/dwell time

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi0.984Er0.016Na)0.5TiO3–0.06BaTiO3 by optimizing sintering temperature/dwell time

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO3 thin films on LaNiO3‐buffered silicon

In-situ Electric Field-Induced Modulation of Photoluminescence in Pr-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 Lead-Free Ceramics

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Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi_0.984Er_0.016Na)_0.5TiO₃–0.06BaTiO₃ by optimizing sintering temperature/dwell time

Multiple improvement in piezoelectricity, ferroelectricity, and fluorescence of 0.94(Bi_0.984Er_0.016Na)_0.5TiO₃–0.06BaTiO₃ by optimizing sintering temperature/dwell time

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon