Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Li, Xiaobo; Pu, Taofei; Li, Xianjie; Li, Liuan; Ao, Jin‐Ping

doi:10.1109/ted.2020.2968358

Cited by 32 publications

(18 citation statements)

References 21 publications

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“…SDs can be created on both n-type and p-type conductivity semiconductors, but n-type conductivity is preferable due to the higher electron mobility [56]. The current through the SD thus obtained was analysed in terms of the thermionic emission diffusion equation or Richardson equation [17,18,34,[57][58][59]:…”

Section: Development Of Psd Chipmentioning

confidence: 99%

Schottky diode temperature sensor for pressure sensor

Basov¹

2021

Preprint

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The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

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Section: Development Of Psd Chipmentioning

confidence: 99%

Schottky diode temperature sensor for pressure sensor

Basov¹

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…SDs can be created on both n-type and p-type conductivity semiconductors, but n-type conductivity is preferable due to the higher electron mobility [57]. The current through the SD thus obtained was analysed in terms of the thermionic emission diffusion equation or Richardson equation [17,18,34,[58][59][60]:…”

Section: Development Of Psd Chipmentioning

confidence: 99%

“…[2,14,15]. The conditions are determined by the field of application with following factors: temperature range, temperature coefficient, measurement error, overall dimensions or size, power consumption [13,[16][17][18][19], state of aggregation and aggressiveness of measured environment (radiation, high temperatures and corrosion) [11,16,17,20,21]. Temperature sensors are created by various types of semiconductor structures: thermistors [1-3, 22, 23], p-n junction diodes [12,24,25], JFET [1], fiber optic [26] and capacitive sensors [4,6].…”

Section: Introductionmentioning

confidence: 99%

“…SDs use epitaxial silicon [19,25,[27][28][29] and polysilicon structures [11] of n -or p-type conductivity with array of different metal, silicon carbide 4H-SiC with barrier metal of Ni [16,20], Ti [30,31], Pt [32] and V2O5 [18], as well as working layers of GaN [17,33] or graphene [34,35] and many other combinations. Semiconductor structures and sapphire [17] or diamond [19] insulators were chosen as substrate for developments. Additionally, SDs were created on SOI wafers [12,13,34,36].…”

Section: Introductionmentioning

confidence: 99%

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Schottky diode temperature sensor for pressure sensor

Basov

2021

Preprint

View full text Add to dashboard Cite

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

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“…We previous demonstrated that GaN SBD have the possibility for temperature sensing up to 200 °C by adopting a thermally stable anode (TiN, NiN, NiO, etc.) [19,20]. At the sub-threshold voltage region (a relatively small current density), The forward voltage appears good linear dependence on temperature with a sensitivity of around 1.0 mV/K.…”

Section: Introductionmentioning

confidence: 96%

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

et al. 2021

IEICE Electron. Express

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To realize the in-situ temperature monitoring of power device, three kinds of Schottky barrier diodes (SBDs) are designed to reveal the effect of geometry on the temperature sensitivity. The current-voltage characteristics at different temperature demonstrate that all the circular-, finger-, and 8-finger-SBDs show good rectification. The forward voltage at a specific sub-threshold current level presents good linearity versus temperature. In addition, the deduced sensitivity presents no dependency on the geometry but is determined by the ideality factor and current density. The sensing mechanism of SBD sensor is explained by the thermionic emission model. Those results are beneficial to the design and fabrication of temperature sensor.

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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Cited by 32 publications

References 21 publications

Schottky diode temperature sensor for pressure sensor

Schottky diode temperature sensor for pressure sensor

Schottky diode temperature sensor for pressure sensor

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

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