P.R. Edwards, R.W. Martin, K. Bejtka, K.P. O’Donnell, S. Fernández-Garrido, E. Calleja
Abstract:Epilayers of the quaternary alloy AlxInyGa1−x−yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emis…
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