Correction: Corrigendum: Experience enhances gamma oscillations and interhemispheric asymmetry in the hippocampus

Abstract

The gamma-filtered traces of the image in Fig. 3a were inadvertently duplicated from Fig. 2a. In addition, the legend for Fig. 3 incorrectly stated that slow gamma traces were displayed in Fig. 3a. In fact, these traces do not distinguish between fast and slow recordings. The correct version of the figure and its legend appear below. The slow and fast gamma power ratios of ENR þ ket were significantly lower than 1 (*Po0.05 and **Po0.01, respectively, t-test, N ENR ¼ 10,The ENR and ENR þ ket power ratios were significantly different (***Po0.001, t-test, N ENR ¼ 10, N ENR þ ket ¼ 8). Acute effect (within 90 min) of intramuscular ketamine administration (3.0 mg kg À 1 , ENR þ a-ket, N ENR þ a-ket ¼ 4) on slow and fast gamma power is also shown in black in the middle and the right panel. ENR þ a-ket did not show the inhibitory effects seen in ENR þ ket. Error bars represent s.e.m.

Monitoring Electrical Biasing of Pb(Zr0.2Ti0.8)O3 Ferroelectric Thin Films In Situ by DPC-STEM Imaging

“…We start with a complex domain state of primarily out-of-plane polarized domains, with contributions of the interfaces and needle-like domains. This mixed state with upwards and downwards polarization domains is comparable to the non-switchable PZT domains previously reported by Han et al [ 11 ]. At 5 s, we start increasing the voltage by 1 V/s.…”

“…Over the last decade, major insights into the nanoscale processes involved in ferroelectric switching were driven by the development of specialized transmission electron microscopy (TEM) systems for in situ experiments using a conductive nano-sized probe brought into contact with the specimen using a piezo-micromanipulator [ 8 , 10 , 11 , 12 , 13 , 14 , 15 ]. The importance of interfaces and their associated defects were confirmed by combining these holders with atomic resolution scanning TEM (STEM) imaging as well as conventional dark-field TEM [ 10 , 11 ]. It was further shown that ferroelastic domains can be permanently stabilized by dislocations at the substrate interface, while similar domains without such pinning dislocations can behave more freely [ 8 ].…”

“…A third, more practical disadvantage is the limited availability of these specialized TEM in situ biasing systems, as well as the concomitant time-consuming and demanding sample preparation procedures. One approach to overcome the first two issues encompasses the introduction of a top-electrode deposited during the sample preparation, which is then contacted far away from the region of interest in the film [ 11 ]. Instead, we have developed a workflow to prepare ferroelectric thin film specimens on commercially available microelectromechanical systems (MEMS) half-chips using a focused ion beam (FIB) allowing more accessible in situ electrical biasing experiments.…”

Ferroelectrics with a controlled oxygen-vacancy distribution by design

“…Meanwhile, an accumulation of defects at specific interfaces deteriorates the overall behaviour of polarization-switching dynamics 20 , 21 . For the charged domain walls stabilized by oxygen vacancies, the defect kinetics determine the switching process that is accompanied by a vacancy redistribution 22 , 23 , and thereby the device operation speed is limited by vacancy transport times 22 .…”

“…For the charged domain walls stabilized by oxygen vacancies, the defect kinetics determine the switching process that is accompanied by a vacancy redistribution 22 , 23 , and thereby the device operation speed is limited by vacancy transport times 22 . The strong interaction with the vacancies gives rise to the clamping of domain walls 24 – 27 and eventually causes imprint, retention loss, and fatigue of polarization states, preventing the widespread use of ferroelectric-based memories 1 , 21 , 28 , 29 .…”