Controlling uniformity of RRAM characteristics through the forming process

Kalantarian, A.; Bersuker, G.; Gilmer, D. C.; Veksler, D.; Butcher, B.; Padovani, Andrea; Pirrotta, Onofrio; Larcher, Luca; Geer, Robert; Nishi, Yoshio; Kirsch, P. D.

doi:10.1109/irps.2012.6241874

Cited by 55 publications

(46 citation statements)

References 12 publications

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“…To confirm the volatility nature at a low operating current of the T3 memory device, we have adopted Agilent V4400 test system to check the LRSs at different I CC s such as 1, 5, 10 and 15 µA respectively. It can be seen that the memory state changed very quickly even at 30 milliseconds after stressing the memory cells at 1-10 µA I CC s. We have also adopted constant 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 voltage stress (CVS) method, 46 whereas the memory cells were stressed at 2.3 V for 1500 seconds; nevertheless, the T3 memory device does not show any retention properties (see Figure S3 in the Supporting Information). Although the T3 memory device shows nonvolatility at I CC ~15 µA, the gradual degradation of memory state towards HRS has been observed even after 60 seconds (not shown here).…”

Section: Pre-forming Ultra-low Power Operation the Typical I-v Featumentioning

confidence: 99%

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

et al. 2017

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Ti/HfO-based resistive random access memory (RRAM) has been extensively investigated as an emerging nonvolatile memory (NVM) candidate due to its excellent memory performance and CMOS process compatibility. Although the importance of the role of the Ti buffer layer is well recognized, detailed understanding about the nature of Ti thickness-dependent asymmetric switching is still missing. To realize this, the present work addresses the effects of Ti buffer layer thickness on the switching properties of TiN/Ti/HfO/TiN 1T1R RRAM. Consequently, we have demonstrated a simple strategy to regulate the FORMING voltage, leakage current, memory window, and decrease the operation current, etc. by varying the thickness of the Ti layer on the HfO dielectrics. Accordingly, controllable and reliable bipolar, complementary, and reverse bipolar resistive switching (BRS, CRS, and R-BRS) properties have been demonstrated. This work also provides the direction to avoid unwanted CRS properties during the first RESET operation by decreasing the FORMING voltage. Furthermore, the memory device shows good nonvolatility at ∼1 μA programming current by selecting a proper thickness of Ti buffer layer. To achieve reliable BRS properties for low power application, the operation current has been further optimized, whereas the memory device shows pulse endurance of more than 7 million cycles at a low pulse width of 50 ns and excellent data retention properties of more than 40 h at 150 °C measurement temperature.

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Section: Pre-forming Ultra-low Power Operation the Typical I-v Featumentioning

confidence: 99%

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

et al. 2017

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“…Despite intense efforts, many issues remain. Much of these challenges are discussed in the literature and are attributed to random filament formation and current overshoot during forming [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…One of the major factors affecting the filament properties is the forming current compliance limit, which determines the overall resistance of the formed filament. However, the current compliance (as defined by the electrical measurement setup) is hard to practically control because the current during a fast transient forming process may exceed the compliance limit (aka overshoot) due to discharge of the parasitic capacitance upon resistance change [2][3][4][5]. Such overshoot then leads to device-to-device LRS variations, which can be seen as the variations of the maximum RESET current.…”

Section: Introductionmentioning

confidence: 99%

Dependence of the filament resistance on the duration of current overshoot

Shrestha¹,

Nminibapiel²,

Campbell³

et al. 2013

2013 IEEE International Integrated Reliability Workshop Final Report

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“…Although the switching characteristics have been explained by many theories, the switching mechanisms are still not fully understood, the most problematic step is the electroforming process of these metal oxide resistive switching (RS) materials [3]. Typically this process is executed only one time for a memory array, and stable resistance switching could be realized after this step.…”

Section: Introductionmentioning

confidence: 99%

The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

Liu¹,

Fang²

2017

Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)

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Abstract. The forming process and SET-RESET mechanism of Pt/TiO2/Al resistive random access memory (RRAM) are investigated. Forming process was implemented by consecutive voltage sweep instead of one-step operation. After forming process, bidirectional self-rectifying characteristics was exhibited. In following SET and RESET operation with ±3V bias, this device can be used as a selector-less device without additional process steps. The characteristics of normal resistive switching is explained by analytical model and verified through simulation.

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Controlling uniformity of RRAM characteristics through the forming process

Cited by 55 publications

References 12 publications

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

Dependence of the filament resistance on the duration of current overshoot

The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

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