Controlling nucleation during unseeded THM growth of CdZnTe crystal

Hong, Bangzhao; Zhang, Song; Zheng, Lili; Zhang, Hui; Wang, Cheng; Zhao, Bo

doi:10.1016/j.jcrysgro.2020.125482

Cited by 12 publications

(4 citation statements)

References 9 publications

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“…According to the classical theory of constitutional supercooling, a large axial temperature gradient is believed to suppress constitutional supercooling and allow increased growth rate. Moreover, a large longitudinal temperature gradient is easier to be realized and minimizes the effects of temperature fluctuation near the growth interface [34]. Thus, the increase in temperature gradient helps in the growth larger grain size which eventually minimizes the number of grains.…”

Section: Effect Of Temperature Gradient and Growth Rate On The Cdznte...mentioning

confidence: 99%

Development of travelling heater method for growth of detector grade CdZnTe single crystals

Vijayakumar,

Amaladass,

Ganesan

et al. 2024

Materials Science in Semiconductor Processing

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Section: Effect Of Temperature Gradient and Growth Rate On The Cdznte...mentioning

confidence: 99%

Development of travelling heater method for growth of detector grade CdZnTe single crystals

Vijayakumar,

Amaladass,

Ganesan

et al. 2024

Materials Science in Semiconductor Processing

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“…a-Se thick films can be conveniently grown in relatively large areas and used for solid-state X-ray image detectors. , As a drawback, a-Se-based detectors are rigid, fragile, and often bulky; in addition, they show low performance, mainly due to low mobility-lifetime product (μτ), thus requiring high operating voltages . CdZnTe (CZT) crystals are considered the gold standard for X-ray detection because of their desirable properties for a solid-state detector, i.e., high resistivity, wide band gap, high density, and high atomic number Z. , However, the CZT growth process is expensive and has a limited yield. ,, Finally, silicon and high-purity germanium (HPGe) are also widely adopted in direct-type detectors, even though they need to be cooled to cryogenic temperatures to reduce thermal noise within acceptable limits.…”

Section: Introductionmentioning

confidence: 99%

“…Solution-processed high-Z nanomaterials have recently gained attention as promising candidates for a new generation of thin-film, easily processable, and low-cost direct X-ray detectors. − ,− …”

Section: Introductionmentioning

confidence: 99%

Low-Voltage and Highly Sensitive PbS Quantum Dot Thin-Film X-ray Monitors

Ruggieri,

Colantoni,

Marconi

et al. 2023

ACS Appl. Electron. Mater.

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In the past decade, lead sulfide quantum dots (PbS QDs) have been widely adopted for the fabrication of visible and infrared photodetectors, thanks to their unique properties such as a wide range of band gap tunability, high optical absorption, easy processability, as well as mechanical flexibility. Such characteristics may be also desirable for the realization of high-energy detectors, and the high atomic number of Pb suggests that PbS QDs could be effectively employed also at X-ray wavelengths. Here, we propose PbS QDs as a sensing material for X-ray detection. A homogeneous population of colloidal PbS QDs (3−4 nm) was synthesized with high purity and good yield (>70%) through a low-cost synthetic route. The colloidal solution of PbS QDs showed chemical and physical stabilities for over 6 months. A PbS QDs thin layer of about 2 μm thickness was obtained through a simple drop-casting deposition and slow evaporation. The device exhibited high sensitivity (2370 μC Gy −1 cm −2 ) and a good detection limit of 5 μGy s −1 to 23 keV hard X-rays at a 1 V bias. Such encouraging results pave the way for the use of PbS QD-based X-ray sensors for imaging applications, suggesting also future developments of low-power and highsensitivity wearable sensors.

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“…These materials are usually fabricated by the vertical Bridgman (VB), horizontal Bridgman (HB), high-pressure Bridgman technique, vertical gradient freeze (VGF) method, or traveling heater method (THM). Most of them are sophisticated techniques, expensive, or of difficult implementation [ 10 , 11 , 12 , 13 , 14 ]. For this reason, the challenge for developing countries is to find a low-cost fabrication method, like vertical Bridgman, and with acceptable material quality.…”

Section: Introductionmentioning

confidence: 99%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in order to find the optimal conditions for single-crystalline growth. Crystalline quality was studied by chemical etching, the elemental composition by wavelength dispersive spectroscopy (WDS), tellurium (Te) precipitates/inclusions concentration by differential scanning calorimetry (DSC), optical transmission by Fourier transformed infrared spectrometry (FTIR), and band gap energy (Egap) by photoluminescence (PL). It was observed that the ingots grown at a lower speed were those of the best crystalline quality, having at most three grains of different crystallographic orientation. The average dislocations density in all of them were similar and correspond to materials of good quality. EPMA results indicated that the homogeneity in the composition was excellent in the ingots central part. The concentration of Te precipitates/inclusions in all ingots was below the instrument (DSC) detection limit, 0.25% wt/wt. In the case of wafers from Cd0.96Zn0.04Te and Cd0.90Zn0.10Te ingots, the optical transmission was better than that of commercial materials and varied between 60% and 70%, while for pure CdTe, the transmission range was between 50% and 55%, the latter being decreased by the presence of Te precipitates/inclusions. The band gap energy Eg of different wafers was experimentally obtained by PL measurements at 76 K. We observed that Eg increased with the Zn concentration of the wafers, following a linear regression comparable to those proposed in the literature, and consistent with the results obtained with other techniques.

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Controlling nucleation during unseeded THM growth of CdZnTe crystal

Cited by 12 publications

References 9 publications

Development of travelling heater method for growth of detector grade CdZnTe single crystals

Development of travelling heater method for growth of detector grade CdZnTe single crystals

Low-Voltage and Highly Sensitive PbS Quantum Dot Thin-Film X-ray Monitors

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

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