Controller Design of a New Universal Two-Phase SiC-GaN-Based DC-DC Converter for Plug-in Electric Vehicles

Moradpour, Milad; Gatto, Gianluca

doi:10.1109/epepemc.2018.8521884

Cited by 5 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Non-isolated DC-DC converters for EV-related applications were discussed in References [11,[65][66][67][68][69][70][71][72][73][74]. Moradisizkoohi et al [65] proposed a half-bridge, three-port, three-level converter that could supply the critical loads using the energy stored in battery if photovoltaic (PV) generation was not available or insufficient.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

“…Because the voltage stress across the switches was reduced using the proposed topology, GaN HEMT technology could be used in the powertrain of the EVs to achieve satisfactory performance. Moradpour and Gatto [68] simulated a 400/60-200-V, 2-kW, 20-50-kHz two-phase SiC/GaN-based converter that satisfied the plug-in EV (PEV)'s high power rating range of 30-150 kW, and the complex multi-phase topology was avoided. A cascade controller was used to realize the design.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

See 1 more Smart Citation

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

View full text Add to dashboard Cite

Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

show abstract