2005
DOI: 10.1063/1.1925320
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Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

Abstract: We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV 31 P ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon.

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Cited by 204 publications
(192 citation statements)
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“…This is demanding, but we note that Q ∼ 10 7 has been achieved in silicon-on-silica photonic-bandgap cavities [28], although we stress that complete modeling is necessary to precisely determine the required geometry. If the diamond substrate is ultra-purity Type IIa (low nitrogen) diamond, individual NV centres can be implanted using single-ion implantation techniques [27,29]. Finally we note that the resonance frequencies for the photonic bandgap cavities will be extremely difficult to tune post-creation, however the Stark effect can be used to tune the NV centres as required [30] to allow an exploration (either statically or dynamically) of the phase space shown in Fig.…”
Section: Potential Implementationsmentioning
confidence: 99%
“…This is demanding, but we note that Q ∼ 10 7 has been achieved in silicon-on-silica photonic-bandgap cavities [28], although we stress that complete modeling is necessary to precisely determine the required geometry. If the diamond substrate is ultra-purity Type IIa (low nitrogen) diamond, individual NV centres can be implanted using single-ion implantation techniques [27,29]. Finally we note that the resonance frequencies for the photonic bandgap cavities will be extremely difficult to tune post-creation, however the Stark effect can be used to tune the NV centres as required [30] to allow an exploration (either statically or dynamically) of the phase space shown in Fig.…”
Section: Potential Implementationsmentioning
confidence: 99%
“…All measurements were performed with a magnetic field B 0 = 1.77 T, in a dilution refrigerator with electron temperature T el ≈ 250 mK. This work follows from previous experiments where the electron [2] and nuclear [3] spins of a single 31 P donor were detected using a compact nanoscale device [14] consisting of ion-implanted phosphorus donors [15], tunnel-coupled to a silicon MOS single- …”
mentioning
confidence: 99%
“…1 In particular, the nitrogen vacancy (NV -) center in diamond is a candidate for deterministic single photon generation 2 and a promising candidate for solid-state spinbased quantum computing using diamond. 3 Several proof-of-principle experiments including single spin readout 4 , spin coherence lifetime measurements 5 and two qubit quantum gate operations 6 have been demonstrated recently.…”
mentioning
confidence: 99%