Controlled production of aligned-nanotube bundles

Terrones, Mauricio; Grobert, Nicole; Olivares, J.; Zhang, J. P.; Terrones, Humberto; Kordatos, Konstantinos; Hsu, Wen Kuang; Hare, Jonathon; Townsend, P. D.; Prassides, Kosmas; Cheetham, Anthony K.; Kroto, Harold W.; Walton, D. R. M.

doi:10.1038/40369

Cited by 771 publications

(350 citation statements)

References 17 publications

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“…Growth temperature, pressure, and time can also affect properties, such as average tube length [70]. Aligned and patterned CNTs on silica (SiO 2 ) substrates have been synthesized by CVD using various precursors such as a mixture of ammonia/ethylene, ethylene/ hydrogen or only methanol at temperatures 750 °C -600 °C [71][72][73]. After the growth, the CNTs were embedded in a dilute polymer or epoxycomposition by drop casting and could be easily peeled off from the substate.…”

Section: Figure 1 A) Schematic Images Of the Cnts With Different Strmentioning

confidence: 99%

Carbon nanotubes for organic/inorganic hybrid solar cells

Arici

Karazhanov

2016

Materials Science in Semiconductor Processing

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Section: Figure 1 A) Schematic Images Of the Cnts With Different Strmentioning

confidence: 99%

Carbon nanotubes for organic/inorganic hybrid solar cells

Arici

Karazhanov

2016

Materials Science in Semiconductor Processing

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“…Attempts to manipulate nanotubes for these applications have been made by postgrowth methods such as cutting a polymer resin-nanotube composite, 5 or drawing a nanotube-ethanol suspension through a ceramic filter. 6 Because these techniques are difficult and labor intensive, in situ aligning of nanotubes during growth using means such as laser etched tracks 7 and the nanopores of porous alumina membranes 8 have been attempted. Aligned growths of carbon nanotubes have been produced by chemical vapor deposition ͑CVD͒ on mesoporous silica with imbedded iron particles.…”

mentioning

confidence: 99%

Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot

Huang

Wang

et al. 1999

Applied Physics Letters

397

196

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Patterned growth of freestanding carbon nanotube͑s͒ on submicron nickel dot͑s͒ on silicon has been achieved by plasma-enhanced-hot-filament-chemical-vapor deposition ͑PE-HF-CVD͒. A thin film nickel grid was fabricated on a silicon wafer by standard microlithographic techniques, and the PE-HF-CVD was done using acetylene (C 2 H 2 ) gas as the carbon source and ammonia (NH 3 ) as a catalyst and dilution gas. Well separated, single carbon nanotubes were observed to grow on the grid. The structures had rounded base diameters of approximately 150 nm, heights ranging from 0.1 to 5 m, and sharp pointed tips. Transmission electron microscopy cross-sectional image clearly showed that the structures are indeed hollow nanotubes. The diameter and height depend on the nickel dot size and growth time, respectively. This nanotube growth process is compatible with silicon integrated circuit processing. Using this method, devices requiring freestanding vertical carbon nanotube͑s͒ such as scanning probe microscopy, field emission flat panel displays, etc. can be fabricated without difficulty.

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“…Since the first discovery of carbon nanotubes (CNTs) in 1991 [1], considerable progress has been made in the synthesis and characterization of CNTs [2][3][4][5][6][7][8][9][10][11][12][13]. Many research groups have also actively developed their potential applications [14][15][16][17][18][19].…”

Section: ⅰ Introductionmentioning

confidence: 99%

A Reliable Field Emission Performance of Double-Walled Carbon Nanotube Field Emitters

Jung¹,

Lee²

2008

Journal of the Korean Vacuum Society

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We investigated the field emission characteristics from the planar field emitters made of double-walled carbon nanotubes (DWCNTs) synthesized by a catalytic chemical vapor deposition (CCVD) method. Transmission electron microscopy, Thermogravimetric and Raman analysis showed that the carbon materials have a low defect level in their atomic carbon structure, pointing to the synthesis of high-purity DWCNTs. For field emission properties of DWCNTs, the turn-on field of DWCNTs was 1.9 V/μm and the current density was about 74 mA/cm 2 at 8.1 V/μm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. The DWCNT field emitters also exhibited a uniform field emission pattern and good field emission stability in a diode configuration.

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Controlled production of aligned-nanotube bundles

Cited by 771 publications

References 17 publications

Carbon nanotubes for organic/inorganic hybrid solar cells

Carbon nanotubes for organic/inorganic hybrid solar cells

Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot

A Reliable Field Emission Performance of Double-Walled Carbon Nanotube Field Emitters

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