This
work demonstrates a novel photovoltaic application in which
graphdiyne (GD) can be employed as a host material in a perovskite
active layer for the first time. In the device fabrication, the best
molar ratio for active materials is verified as PbI2/MAI/GD
being 1:1:0.25, yielding a peak power-conversion efficiency of 21.01%.
We find that graphdiyne, as the host material, exerts significant
influence on the crystallization, film morphology, and a series of
optoelectronic properties of the perovskite active layer. A uniform
MAPbI3 film with highly crystalline qualities, large domain
sizes, and few grain boundaries was realized with the introduction
of graphdiyne. Moreover, the current–voltage hysteresis was
negligible, and device stability was significantly improved as well.
The results indicate that graphdiyne as the host active material presents
great potential for the enhancement of the performance of perovskite
solar cells.