Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a Nanogenerator

Shin, Hyeon‐Jin; Choi, Won Mook; Choi, Dukhyun; Han, Gang; Yoon, Sang Youl; Park, Hyunkyu; Kim, Sang Woo; Jin, Yong; Lee, Sang Yoon; Kim, Jong Min; Choi, Jae‐Young; Lee, Young Hee

doi:10.1021/ja105140e

Cited by 248 publications

(139 citation statements)

References 54 publications

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“…Therefore, by replacing the Si wafers with flexible and transparent conducting electrodes, such as ITO deposited on plastic substrates [499,544], carbon nanotube networks [545], and graphene [546][547][548], rollable and transparent nanogenerators can be fabricated as power sources for touch sensors, artificial skins, and wearable personal electronics.…”

Section: Nano Res 59mentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Nano Res 59mentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…21 This limit is expected due to the fact that the sheet carrier density is in principle, obtained by multiplying the film thickness to the bulk carrier density. 7 However, recently in doped graphene high sheet carrier concentration n ≈ 10 15 cm −2 have been reported suggesting a Fermi level pinning far apart from the Dirac point, depending on the type of carrier. 22 In most theoretical and experimental published work so far, attention has been focused on the behavior of carriers close to the Dirac point, and the carrier confinement has been ideally considered as 2D.…”

Section: Simulation Structurementioning

confidence: 99%

“…In recent reports, high mobility has been confirmed in multilayer graphene making it an emerging TCE material. [4][5][6][7] In 2010, Bae et al reported that sheet resistance of multilayer graphene was lowered to 10 Ω/sq with 85 % optical transmission by stacking four monolayers by chemical doping with HNO 3 . 8 Further advances were reported by Khrapach et al in 2012.…”

Section: Introductionmentioning

confidence: 99%

Multilayer graphene as a transparent conducting electrode in silicon heterojunction solar cells

Patel

Tyagi

2015

AIP Advances

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In this paper, the structure of a graphene/silicon heterojunction solar cell has been studied under simulated conditions. The parameters of the cell’s layers have been optimized by using AFORS-HET software. Instead of reported 2D nature, we considered graphene as 3D in nature. To ensure the formation of Schottky junction, electrical contacts were made along c-axis to collect the minority carriers, which generate upon illumination. By optimizing the various parameters of n-type multilayer graphene, we achieved the best-simulated cell with the power conversion efficiency of 7.62 % at room temperature. Up to 40 layers of n-type graphene, the efficiency found to be constant and enhanced only to 7.623 %. After further optimization of the parameters of p-crystalline silicon wafer, a maximum efficiency of 11.23 % has been achieved. Temperature dependence on the cell performance has also been studied and an efficiency of 11.38 % has been achieved at 270 K. Finally, we have demonstrated that n-type multilayer graphene can act as an excellent transparent conducting electrode.

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“…Chemical doping methods can further enhance the conductivity of graphene [30,[32][33][34]. The decrease of sheet resistance for various chemical dopants is shown in figure 4(b).…”

Section: Enhancement Of Sheet Resistancementioning

confidence: 99%