Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)

Ciuk, Tymoteusz; Ciura, Łukasz; Michałowski, Paweł Piotr; Jagiełło, Joanna; Dobrowolski, A.; Piętak, Karolina; Kalita, Damian; Wzorek, M.; Budzich, Rafał; Czołak, D.; Kolek, Andrzej

doi:10.1016/j.physe.2022.115264

Cited by 9 publications

(4 citation statements)

References 49 publications

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“…In the low-temperature region, the difference between the 1/f noise magnitudes of samples is more substantial and exceeds one order of magnitude. On this basis, it can be claimed that the noise measurement is more sensitive to local effects [9] (i.e., high local inhomogeneous current) than average quantities such as sheet resistance, which is comparable for both samples. More studies are needed, including a batch of samples with different doping and mobility, to reveal the origin of the fluctuations.…”

Section: Resultsmentioning

confidence: 96%

“…In this experiment, two measurements were made at the diagonal contacts, AC and BD, for each sample. Changing the contacts' role from driving to sensing should not change the measured noise magnitude if noise originated from resistance fluctuations [8][9][10]. This so-called reciprocity rule holds for both SL structures, which means that: (i) contact noise does not contribute to the total measured noise, (ii) fluctuations originate from mobility or carrier concentration.…”

Section: Resultsmentioning

confidence: 99%

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Low Frequency Noise Properties of InAs/GaSb Superlattice

et al. 2022

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The paper reports 1/f noise properties of InAs/GaSb superlattice as a function of voltage bias and temperature. Noise measurements were compared with standard transport characteristics: mobility and carrier concentration. Interestingly, while these standard characteristics of the two samples are comparable, the 1/f noise is substantially different. The results suggest that low-frequency noise is a more sensitive electronic transport characterization tool than standard techniques based on average current/voltage analysis.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Low Frequency Noise Properties of InAs/GaSb Superlattice

et al. 2022

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“…QFS graphene [ 26 , 27 , 28 , 29 ] necessary for the graphene-based HTHS was grown on semi-insulating high-purity on-axis 4H-SiC(0001) (Cree Inc.) in a hot-wall Aixtron VP508 reactor using the epitaxial Chemical Vapor Deposition method [ 30 ], with thermally decomposed propane as a carbon source and in situ hydrogen atom intercalation [ 31 ]. The substrate was processed into a 1.6 mm × 1.6 mm Hall effect structure featuring a cross-shaped [ 32 ] 100

m × 300

m graphene mesa and four Ti/Au (10 nm / 60 nm) ohmic contacts, all passivated with a 100 nm-thick aluminum oxide (Al 2 O 3 ) layer synthesized from trimethylaluminum (TMA) and deionized water at 670 K in a Picosun R200 Advanced Atomic Layer Deposition (ALD) reactor [ 33 , 34 ]. Detailed information on the fabrication processes is included in Refs.…”

Section: Methodsmentioning

confidence: 99%

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

El-Ahmar

Przychodnia

Jankowski

et al. 2022

Sensors

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The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈7×1017 cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

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“…An alternative could be to employ atomic layer deposition (ALD). The technique is well suited to grow highquality continuous films and has already found extensive use in the fabrication of electronic devices [54][55][56][57][58]. However, the main drawback of ALD use with TMDs is that it often requires coordinatively unsaturated surface sites to initiate the growth process.…”

Section: Introductionmentioning

confidence: 99%

Dative bonding as a mechanism for enhanced catalysis on the surface of MoS2

Szary

2023

Preprint

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Transition-metal dichalcogenide (TMD) layers have been a subject of widespread interest as platforms for electronic devices. However, the low chemical activity of their basal plane results in several technological bottlenecks, including high contact resistance at TMDelectrode interfaces, difficult growth of high-quality gate-oxide layers, and challenging functionalization. The simplest, and perhaps only, approach to overcoming those limitations may be to exploit dative bonding. The effect can enhance binding on TMDs, since their chalcogen nonbonding lone-pair orbitals can function as electron donors. Therefore, it should also be able to impact the surface catalysis for reactions that produce acceptors. This computational study seeks to investigate whether S→P dative bonding may be an effective mechanism for catalysis on the surface of MoS2, and whether the sheet can be functionalized via chemical reactions enabled by the binding of PHn and PCln. The results show that the bonding facilitates the PH functionalization of MoS2. The interaction is strong (1.11 eV), making the whole process exothermic, and the activation energy notably reduced (from 2.08 to 0.5 eV). Furthermore, the mechanism is intrinsically selective, which could prove a vital feature for future advancements in TMD-based electronics, since it could steer selected processes toward surface functionalization or thin-film growth.

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Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)

Cited by 9 publications

References 49 publications

Low Frequency Noise Properties of InAs/GaSb Superlattice

Low Frequency Noise Properties of InAs/GaSb Superlattice

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

Dative bonding as a mechanism for enhanced catalysis on the surface of MoS2

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