Contact materials for nanowire devices and nanoelectromechanical switches

Hussain, Muhammad Mustafa; Song, Jinhui

doi:10.1557/mrs.2011.6

Cited by 5 publications

(1 citation statement)

References 40 publications

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“…This phenomenon is amplified by non‐uniformity in dimensionality. The Schottky barrier between metal contacts and the semiconducting carbon nanotube can be tuned by modifying the electrodes' work function by hydrogen treatment), vacuum anneal, and post‐contact deposition anneal to desorb oxygen; all can help achieve a smaller barrier 16–19.…”

Section: Contact Engineering For One and Two‐dimensional Nano‐devicesmentioning

confidence: 99%

Contact engineering for nano‐scale CMOS

Hussain

Fahad

Qaisi

2012

Physica Status Solidi (a)

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High performance computation with longer battery lifetime is an essential component in our today's digital electronics oriented life. To achieve these goals, field effect transistors based complementary metal oxide semiconductor play the key role. One of the critical requirements of transistor structure and fabrication is efficient contact engineering. To catch up with high performance information processing, transistors are going through continuous scaling process. However, it also imposes new challenges to integrate good contact materials in a small area. This can be counterproductive as smaller area results in higher contact resistance thus reduced performance for the transistor itself. At the same time, discovery of new one or two‐dimensional materials like nanowire, nanotube, or atomic crystal structure materials, introduces new set of challenges and opportunities. In this paper, we are reviewing them in a synchronized fashion: fundamentals of contact engineering, evolution into non‐planar field effect transistors, opportunities and challenges with one and two‐dimensional materials and a new opportunity of contact engineering from device architecture perspective.

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Section: Contact Engineering For One and Two‐dimensional Nano‐devicesmentioning

confidence: 99%

Contact engineering for nano‐scale CMOS

Hussain

Fahad

Qaisi

2012

Physica Status Solidi (a)

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Resolving the Adhesive Behavior of 1D Materials: A Review of Experimental Approaches

Mead¹,

Wang²,

Zimmermann³

et al. 2023

Engineering

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Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays

Shavezipur

Harrison

Lee

et al. 2015

J. Microelectromech. Syst.

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This paper describes the improvement of pull-in stability, contact properties, and reliability of laterally actuated nanoelectromechanical relays by partitioning the mechanical and electrostatic domains in the relay structure. Separation of the two physics allows us to individually optimize the structural stiffness and the actuation voltage to increase the contact pressure and reduce the ON-state resistance without applying excessive drain voltage. The devices can tolerate more than 200% overdrive gate voltage, resulting in near 100% increase in contact force, and reducing the contact resistance from ∼10 G to ∼23 K . For a given overall device dimension, tailoring the mechanical and electrostatic elements independently also enables us to control the pull-in and pull-out voltages, which have different design requirements for different applications. The measurement results show that the pull-in/pull-out hysteresis could vary between 30% and 60% of the actuation (pull-in) voltage. Increasing the mechanical force without affecting the device actuation voltage improves the relay reliability by reducing the possibility of failure due to source-drain stiction when the relay is switched ON. As a proof of concept, mechanical relays are fabricated using polycrystalline silicon coated by a titanium nitride layer deposited via plasma enhanced atomic layer deposition.[2014-0018] IndexTerms-Nanoelectromechanical systems, low power electronics, laterally actuated relay, partitioning electrostatic-structural domains, contact reliability.

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Contact materials for nanowire devices and nanoelectromechanical switches

Abstract: Abstract

Cited by 5 publications

References 40 publications

Contact engineering for nano‐scale CMOS

Contact engineering for nano‐scale CMOS

Resolving the Adhesive Behavior of 1D Materials: A Review of Experimental Approaches

Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays

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