Considering the flare by introducing the random aberration and non-conserved aberration

Shibuya, Masato; Watanabe, Nobuaki; Ezaki, Hiromi; Nakadate, Suezou

doi:10.1117/12.600818

Cited by 3 publications

(1 citation statement)

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“…By introducing the concept of random aberration and categorizing the wavefront aberration into the figure and random aberrations, the phenomenon of local flare can be regarded as the result of the random aberration. 19,20) The classification of spatial frequencies into LSFR, MSFR, and HSFR is convenient for evaluating the surface roughness of mirrors but perfunctory, and does not reflect the optical design. The MSFR has a three-decade frequency range; however, for full-field exposure tools, the frequency range corresponding to flare is wider than such a range.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Flare Modeling and Derivation for Extreme Ultraviolet Optics

Shiraishi

Oshino

Murakami

et al. 2011

Jpn. J. Appl. Phys.

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Flare has a critical impact on extreme ultraviolet (EUV) lithography. Precise estimation and control of flare amount are important for optical proximity correction (OPC). Flare can be calculated by the convolution of a reticle pattern with a flare point spread function (PSF) containing total integrated scatter (TIS) and scatter PSF (PSF SC) derived from the power spectral density (PSD) of the mirror surface. TIS is traditionally obtained by the integration of PSF SC. However, a portion of scatter cannot reach the wafer. Hence, TIS should be defined as the total amount of as-scattered light, while PSF SC should be defined as the amount of light reaching the wafer; i.e., TIS should be derived from PSF different from PSF SC. We also had other considerations: the termination of linear approximation, the scatter extinction effect of multilayers, and the obscuration effect. With these considerations, we can calculate flare behaviors that agree well with the experiments.

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Section: Introductionmentioning

confidence: 99%