Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

Surface orientation dependency for AlGaAs growth rate with/without HCl in MOCVD

“…In the presence of HCl, volatile Al and Ga chlorides can form and can be desorbed from the surface of the mask before the Al x Ga 1Àx As can nucleate and grow. A possibly larger diffusion length for Clcontaining admolecules on both the mask would facilitate the removal of unwanted materials from the masked regions [18]. These phenomena reduce the gas phase supersaturation at the mask surface and can improve the growth selectivity [10].…”