Conductivity and photoconductivity in boron doped diamond films: Microwave measurements

Abstract

We used the microwave technique to measure electrical properties of heavily boron doped diamond films. This technique overcomes problems such as the presence of parasitic resistance due to the electrical contacts. The conductivity of these films is rather high (about 104 S m−1). The measured microwave conductivity has the same values as the dc conductivity. The conductivity varies with the doping. The highest value of conductivity does not appear for the highest value of doping, because of the presence of a parasitic phase. This will be proved by electron spin resonance and Raman spectra. Theoretical calculation rules out the skin effect in our measurements. It will be also possible to perform microwave photoconductivity measurements. The photoconductivity behavior varies in the opposite way to the conductivity. One explanation, based on the recombination time which decreases with the conductivity, will be presented.

Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

“…Zn content (in the bulk of each CuInSe 2 piece) was measured along the thickness of the samples. The conduction type and the material conductivity were determined by respectively, the thermal probe method and the high frequency technique (HF) in a contactless way based on microwave resonance cavity (Gire et al 1997;Gevrey et al 2001;Benabdeslem et al 2007).…”