Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

Abstract

We have investigated the optical transitions in Ga1−yInyNxAs1−x/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset Qc, electron effective mass me*, and band gap energy Eg were estimated. It was found that the Qc is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0–1)%. The me* of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the me* and Eg of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states.

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

“…Therefore, the difference of the post-annealing effect on the PL properties between GaAsSbN and Ga(In)NAs systems might be related with the structure change of material. For GaNAs system, the N atoms reorganization assisted by the point-defect during annealing process is the main reason for blueshift [19,22,23]. The larger blueshift appeared in GaInNAs system than in GaNAs system is due to the additional effect induced by the existent of In atoms in annealing process, such as the In-N interaction or the formation of N-In bonds due to the Ga site around N atom replaced by In atom through the point-defect assisted reorganization in the annealing process [24].…”

Spectroscopic characterization of 1.3μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

“…11,12 Now that device-quality material grown by MOVPE is emerging, it is important to study the optical properties of this material to compare and contrast parameters and modeling in detail to the MBE case. [13][14][15][16][17][18] In this letter, we investigate the detailed optical characterization of high-quality strain-compensated GaInNAs single-quantumwell ͑SQW͒ material grown by MOVPE, from a growth system proven to produce high-performance laser diodes. 12 In addition to the interband transitions between quantized QW states observed by photoluminescence excitation ͑PLE͒, polarized PL properties are also reported, which is important on the one hand to verify the transition assignments and modeling approach, and on the other hand for the development of devices such as polarization-insensitive semiconductor optical amplifiers.…”

Photoluminescence studies in modulation doped GaInNAs/GaAs multiple quantum wells

“…2. If we assume that the variations in the peak energies of the fitted Gaussian curves are solely due to the non-uniform nitrogen concentration between the quantum wells, the maximum extent of deviations from the nominal nitrogen concentrations inside the wells are calculated using the effective masses reported in [7]. We found that these deviations are within 18% (0.0167, 0.0157, and 0.014) and 25% (0.0105, 0.0094, and 0.008) of the nominal nitrogen concentration, i.e.…”