2001
DOI: 10.1103/physrevb.64.075420
|View full text |Cite
|
Sign up to set email alerts
|

Conductance,IVcurves, and negative differential resistance of carbon atomic wires

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

1
89
0

Year Published

2004
2004
2020
2020

Publication Types

Select...
9
1

Relationship

1
9

Authors

Journals

citations
Cited by 204 publications
(90 citation statements)
references
References 75 publications
1
89
0
Order By: Relevance
“…Usually, I-V curves can be measured by experimental methods which show nonlinear behavior. 17,18 Studies of semiconductor nanowires are of particular interest 19 because their properties make them good potential candidates in the development of nanoelectronic devices. Despite these progresses, the formation mechanism and the correlation between the atomic structures and transport properties of atomic-sized nanowires are still insuffia͒ Electronic mail: lihuilmy@hotmail.com JOURNAL OF APPLIED PHYSICS 102, 073709 ͑2007͒ cient.…”
Section: Introductionmentioning
confidence: 99%
“…Usually, I-V curves can be measured by experimental methods which show nonlinear behavior. 17,18 Studies of semiconductor nanowires are of particular interest 19 because their properties make them good potential candidates in the development of nanoelectronic devices. Despite these progresses, the formation mechanism and the correlation between the atomic structures and transport properties of atomic-sized nanowires are still insuffia͒ Electronic mail: lihuilmy@hotmail.com JOURNAL OF APPLIED PHYSICS 102, 073709 ͑2007͒ cient.…”
Section: Introductionmentioning
confidence: 99%
“…Due to their importance as potential building blocks for the next-generation molecular/ nano-engineered electronic devices, understanding electronic transport through CNTs 13,14 and individual molecule 15,16 ͑and references therein͒ has become the focus of nanoelectronics research in recent years. Although spin-independent transport in both metal-CNT-metal [17][18][19][20] and metal-molecule-metal [21][22][23][24][25] junctions have been extensively studied theoretically, theoretical work on spin-dependent transport is more limited, 26,27 particularly in CNT-molecule-CNT junctions. 9,28 There have been many proposals for building electronic devices using single molecules 15,16 ͑and references therein͒.…”
mentioning
confidence: 99%
“…Hence, the strong diode effect of majority spin current is presented. The transmission coefficients that entered the bias voltage window originate from the couple of bands of CrAs around the Fermi level and the tail of the bottom of conductance band of AlAs, because of the electrochemical potential shift under the application of bias voltage in electrodes, which result in the shifting of the Fermi levels correspondingly, as well as the contribution of charge-transfer doping [11]. Fig.…”
Section: Resultsmentioning
confidence: 99%