2016 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific) 2016
DOI: 10.1109/itec-ap.2016.7513023
View full text |Buy / Rent full text
|
Sign up to set email alerts
|
Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
7
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 15 publications
(7 citation statements)
references
References 15 publications
0
7
0
Order By: Relevance
“…In addition to heat transfer and heat storage, the device packaging structure has the ability to store heat. Heat capacity C th represents the relationship between heat Q th and T, and heat capacity can be used to describe the ratio of heat change to temperature difference [10], [11]. In general, T j can be used to express the junction temperature of IGBT chip, and T c to represent the temperature of copper bottom shell of the module, T s(th) to indicate the temperature of radiator, R th(j−c) to indicate the thermal resistance of, R th(c−s) to the shell to indicate the thermal resistance of the shell to the radiator.…”
Section: B Igbt Health Evaluation Based On Thermal Resistance Modelmentioning
confidence: 99%
“…In addition to heat transfer and heat storage, the device packaging structure has the ability to store heat. Heat capacity C th represents the relationship between heat Q th and T, and heat capacity can be used to describe the ratio of heat change to temperature difference [10], [11]. In general, T j can be used to express the junction temperature of IGBT chip, and T c to represent the temperature of copper bottom shell of the module, T s(th) to indicate the temperature of radiator, R th(j−c) to indicate the thermal resistance of, R th(c−s) to the shell to indicate the thermal resistance of the shell to the radiator.…”
Section: B Igbt Health Evaluation Based On Thermal Resistance Modelmentioning
confidence: 99%
“…3) V CE ON and V F Measurements Using a Depletion Mode Small Signal MOSFET [70], [71], [92]: Fig. 21 shows a real-time measurement circuit of on-state collector-emitter voltages (V CE ON ) of IGBTs and forward voltages (V F ) of diodes using a depletion mode MOSFET, which has a negative threshold voltage (V GS < 0).…”
Section: A Offline V Ce On and V F Measurementsmentioning
confidence: 99%
“…In this system, a 600 V, 30 A, three-phase transfer molded IPM is used for the test converter and a 1200 V, 75 A, three-phase IGBT module is used for the load converter. More detailed information about the test setup can be obtained in [12] and [23]. 2) Power IGBT Module Under Test: Fig.…”
Section: Accelerated Power Cycling Test Under Different Junctionmentioning
confidence: 99%