Condensation of electron-hole pairs in a degenerate semiconductor at room temperature

Abstract

It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole pairs with the use of mediating photons of a resonant electromagnetic field. We have demonstrated that in the case of a strong degeneracy of the plasma the critical temperature of the condensation is determined by the Fermi energies of the plasma components rather than the order parameter ∆. The critical temperature can exceed 300 K at electron-hole densities as large as 6 . 1018 cm -3 . The theoretical model is consistent with available experimental data.

Selectively enhanced UV and NIR photoluminescence from a degenerate ZnO nanorod array film

“…Generally, the Coulombic attraction of defects ensures the formation of excitons. 47 The H 2 annealing is efficient for generating oxygen vacancies in ZnO, and the increased oxygen vacancy concentration is able to cause a higher density of bound excitons and enhances the overlapping and collision probability of excitons. 48 Therefore, the introduced abundant oxygen vacancies in the H-NRS promote the multiplication of the bound excitons, and the high oxygen vacancy concentration also enhances the recombination of the bound excitons.…”

Strong Coupling and Rabi Oscillations in GaAs/AlGaAs Heterostructures as a Result of Electron–Hole Pair Condensation at Room Temperature

“…How-ever, the non-equilibrium condensation of electrons and holes towards the bottoms of the bands takes place during the superradiant phase transition. This process has been previously described in detail [21,27,28]. As a result of the condensation, the number of oscillators, large that the criterion ( 1) is met, then the regime of strong coupling sets in and the observation of Rabi oscillations becomes feasible.…”

Nonlinear optical effects during femtosecond superradiant emission generation in semiconductor laser structures

“…Because of the complexity of this treatment, the associated optical field equations have been traditionally simplified using several approaches, including the slowly-varying envelope approximation (SVEA) and rotating wave approximation (RWA). Our previous models of the SR generation in semiconductors [6,17,18] were also based on the first two approaches. It described reasonably well the basic properties of SR pulses.…”