Concentration phase diagram of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ba</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Sr</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>solid solutions

Широков, В. Б.; Торгашев, В. И.; Bakirov, Apas; Lemanov, V. V.

doi:10.1103/physrevb.73.104116

Cited by 79 publications

(50 citation statements)

References 45 publications

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“…2. Experimental investigations of the phase diagram of BST crystals [8], supported by theoretical calculations [9], have shown that the addition of Sr to BaTiO 3 leads to the decrease of temperatures of all three phase transitions and at 30 percent of strontium doping the ferroelectricity appears slightly below the room temperature. In the case of thin films, substrate-induced stress shifts the ferroelectric phase transition to higher temperatures when compared to the bulk material [13].…”

Section: Resultsmentioning

confidence: 99%

“…BST is a continuous solid solution between BaTiO 3 and SrTiO 3 over the whole concentration range. Both experimental reports and theoretical studies of the BST phase diagram of single crystals and ceramic were published in a number of papers [7][8][9][10][11][12]. It was shown that the temperatures of all three phase transitions of pure barium titanate decrease linearly in the BST solid solution with increasing of the Sr content up to 0.2 < x < 0.25.…”

Section: Introductionmentioning

confidence: 99%

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Strain engineering of electrical conductivity in epitaxial thin Ba_0.7Sr_0.3TiO₃ film heterostructures

Mackeviciute¹,

Bagdzevičius²,

Ivanov³

et al. 2016

Lith. J. Phys.

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Thin epitaxial films have a great potential to be used in real life applications, such as oxide-on-silicon. However, they often contain a large amount of defects, leading to an enhanced electrical conductivity. This could be desirable in some applications (i. e. memristors), but the mechanism is not fully understood. Here we report on the investigation of epitaxial barium strontium titanate thin films deposited on strontium titanate single crystal substrates (Ba 0.7 Sr 0.3 TiO 3 /SrRuO 3 //SrTiO 3 heterostructures) with a controlled epitaxial strain. The impedance analysis allowed us to propose a model, which explains changes in the temperature dependence of the conductivity based on the strain-dependent anisotropic change of electron/hole mobility.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Strain engineering of electrical conductivity in epitaxial thin Ba_0.7Sr_0.3TiO₃ film heterostructures

Mackeviciute¹,

Bagdzevičius²,

Ivanov³

et al. 2016

Lith. J. Phys.

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“…1,2 STO is also a perfect prototype to investigate phase transition, 3 especially to understand the surface and interface structural configuration for the perovskite films grown on it. 4 Although ferroelectric properties were only reported through oxygen isotope exchange ͑ST 18 O͒, 3,5 and cation substitution, 6,7 recent theories and experiments validate the existence of ferroeletricity in STO thin films under strain. [8][9][10] He et al [11][12][13] systematically studied the structural phase transition of STO thin films under strain.…”

mentioning

confidence: 99%

Strain distribution in epitaxial SrTiO3 thin films

Zhai

Jiang

et al. 2006

Applied Physics Letters

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The lattice strain distributions of epitaxial SrTiO 3 films deposited on LaAlO 3 were investigated by in situ x-ray diffraction at the temperature range of 25-300 K, grazing incident x-ray diffraction, and high resolution x-ray diffraction. The nearly linear temperature dependence of the out-of-plane lattice constant of SrTiO 3 was observed in the measured temperature range. The depth distribution of the lattice strain at room temperature for SrTiO 3 films includes the surface layer, strained layer, and interface layer. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2424282͔ SrTiO 3 ͑STO͒ is an incipient ferroelectric material in perovskite structure, which has been extensively studied for its application in tunable microwave devices for having a large and variable dielectric constant. 1,2 STO is also a perfect prototype to investigate phase transition, 3 especially to understand the surface and interface structural configuration for the perovskite films grown on it. 4 Although ferroelectric properties were only reported through oxygen isotope exchange ͑ST 18 O͒, 3,5 and cation substitution, 6,7 recent theories and experiments validate the existence of ferroeletricity in STO thin films under strain. [8][9][10] He et al. [11][12][13] systematically studied the structural phase transition of STO thin films under strain. Devonshire 14 predicted the shift of the ferroelectric phase transition temperature ͑T c ͒ for STO thin films due to the biaxial strain. Haeni et al. 10 reported that the room temperature ferroelectricity appears for the tensile strained STO thin films on DyScO 3 substrates, although STO crystal is incipient ferroelectric. There is little work on the observation of distribution of lattice strain along the normal of sample surface for STO thin films.In this letter, the distribution of the lattice strain of the epitaxial STO films grown on LaAlO 3 ͑LAO͒ ͑001͒ substrate by laser molecular beam epitaxy ͑MBE͒ deposition ͑L-MBE͒ is investigated. The temperature dependence of the c-direction lattice constant ͑c-T curve͒ is nearly linear, which is different from that of the bulk. The depth dependence of the lattice strain is not homogeneous, which may be due to the competition between the elastic restore and the lattice mismatch between STO film and LAO substrate.STO films were grown on LAO ͑001͒ single crystal substrate in a L-MBE system. The technique was used to deposit STO on Si in our previous studies. 15,16 Briefly, a single crystal STO target was used to grow STO film. A KrF excimer laser was used in a repetition rate of 2 Hz. The substrate was heated to 770°C. The film thicknesses were 80, 150, and 280 nm from the measurement of a Dektax 3 ST surface profile. X-ray diffraction ͑XRD͒ ͑Cu K␣ radiation͒ analysis was performed using the /2 scan mode on a Rigaku Dmax-rB and a Bruker Advanced D8 X-ray diffractometer. The depth dependence of strain, which is related to the film thickness, was determined by grazing incident x-ray diffraction ͑surface x-ray diffraction͒, which was carried out on Be...

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“…О с н о в н о е с о с т о я н и е п л е н к и. Для твер-дого раствора BST с концентрацией x = 0.7, как это следует из [13,14], ротационный параметр порядка (ПП), связанный с поворотами октаэдров, можно не учиты-вать, а ограничиться только ПП-поляризацией. Исполь-зуя объемный потенциал восьмой степени, термодина-мический потенциал для пленки BST07, осажденной на (001)-поверхность кубической подложки, запишем в виде [14] …”

Section: результаты и обсуждениеunclassified

“…Обладая особыми диэлектрическими свойствами и имея низкие диэлектрические потери, твердые растворы BST являются перспективным ма-териалом для применения в микро-и наносистемной технике [10][11][12]. Для всего ряда твердых растворов по-строена термодинамическая теория, которая позволяет описывать физические свойства как объемных образцов, так и их тонких пленок [13,14].…”

Section: Introductionunclassified

Вынужденный Пироэффект В Планарном Поле

Широков¹,

Разумная²,

Юзюк³

2017

Физика Твердого Тела

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Исследованы действие вынужденной деформации и влияние планарного электрического поля на основное состояние сегнетоэлектрических тонких пленок Ba 0.7 Sr 0.3 O 3 , осажденных на (001)-ориентированные кубиче-ские подложки. Для значений вынужденной деформации, соответствующих различным основным состояниям, построена зависимость пироэлектрического коэффициента от величины электрического поля Ex в плоскости пленки. В областях, где пленка может работать в режиме диэлектрического болометра, наблюдается значение поля, при котором пирокоэффициент достигает экстремального значения. Существует значение вынужденной деформации, при котором пироэффект проявляется наиболее ярко.Работа выполнена за счет средств Российского научного фонда (грант № 14-12-00258).

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Concentration phase diagram ofBaxSr1−xTiO3solid solutions

Cited by 79 publications

References 45 publications

Strain engineering of electrical conductivity in epitaxial thin Ba_0.7Sr_0.3TiO₃ film heterostructures

Strain engineering of electrical conductivity in epitaxial thin Ba_0.7Sr_0.3TiO₃ film heterostructures

Strain distribution in epitaxial SrTiO3 thin films

Вынужденный Пироэффект В Планарном Поле

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Concentration phase diagram ofBaxSr1−xTiO3solid solutions

Cited by 79 publications

References 45 publications

Strain engineering of electrical conductivity in epitaxial thin Ba0.7Sr0.3TiO3 film heterostructures

Strain engineering of electrical conductivity in epitaxial thin Ba0.7Sr0.3TiO3 film heterostructures

Strain distribution in epitaxial SrTiO3 thin films

Вынужденный Пироэффект В Планарном Поле

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Strain engineering of electrical conductivity in epitaxial thin Ba_0.7Sr_0.3TiO₃ film heterostructures

Strain engineering of electrical conductivity in epitaxial thin Ba_0.7Sr_0.3TiO₃ film heterostructures