Concentration dependence of carrier localization in InN epilayers

Shu, G. W.; Wu, Pae; Lo, M. H.; Shen, Ji‐Lin; Lin, Tai‐Yuan; Chang, Hsien-Chih; Chen, Y. F.; Shih, Ching‐Long; Chang, Chin An; Chen, N. C.

doi:10.1063/1.2357545

Cited by 27 publications

(23 citation statements)

References 15 publications

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“…These activation energies are in good agreement with those reported for shallow and deep acceptor states of high quality InN films [17,20]. The value of E a2 is close to the localization energy originates from the potential fluctuations of randomly located ionized impurities, which can be treated as acceptor-type centers, distributed above the top of the valence band [18,19]. These results suggest that the quenching could be due to thermal delocalization of holes from acceptor levels, followed by nonradiative recombination.…”

Section: Resultssupporting

confidence: 87%

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InN layers grown by MOCVD on substrates

Jia

Chen

Zhou

et al. 2010

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 87%

“…5(b). The temperature dependence of the integrated intensity is well fitted by two nonradiative recombination channels using the function [17][18][19] IðTÞ…”

Section: Resultsmentioning

confidence: 99%

InN layers grown by MOCVD on substrates

Jia

Chen

Zhou

et al. 2010

Journal of Crystal Growth

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“…29,79) So far, a wide range of PL lifetimes or carrier lifetimes of sub-ps to a few ns has been reported. [79][80][81][82][83] The main carrier decay process was attributed to NRR at defects rather than Auger processes in Refs. 80 and 82.…”

Section: Luminescence Intensity and Nonradiative Carrier Recombinatiomentioning

confidence: 99%

Carrier dynamics and related electronic band properties of InN films

Ishitani

2014

Jpn. J. Appl. Phys.

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In the present article, we focus our discussion on the carrier dynamics of the scattering and recombination processes of InN films and the related band-edge energy structure. Various reports on this matter are summarized and some issues are reexamined. The analysis result based on the apparent band-band transition matrix element is consistent with a reported effective heavy hole mass of 0.59 (+0.06) m 0 . An E p value related to the transition matrix element of 10-14 eV is thought to be plausible. The ambiguity of the band-edge structure is evaluated by the uncertainty of electron density. The distortion of the conduction band bottom and the ambiguity of the estimation of the many-body effect are discussed. The enhancement of the anisotropic electron-scattering nature with the decrease in residual electron density reveals that the residual electron source has isotropic potentials: point defects or small complexes. Infrared reflectance spectrum analysis reveals the high electron mobility inside grains in spite of the scattering by edge-type dislocations which cause the anisotropic carrier scattering. The recombination processes at low temperatures are dominated by nonradiative processes related to edge-type dislocations, while the thermally activated nonradiative recombination process is independent of the dislocation density. The activation processes and energies of the recombination related to phonon localization are characterized. InN is a peculiar material that has high carrier mobility and a strong electron-phonon interaction, which possibly induces the high nonradiative carrier recombination rate. The control of phonon localization is thus required.

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“…However, a significant variation in the localization energy is not observed due to a small difference in the background carrier concentration between sample A and sample B since the localization energy varies as n 5/12 , where n is the background carrier concentration. 11,20 In order to study the effect of excitation energies on the radiative lifetime, mobility edge, and localization energy in InN, we have performed the time-resolved PL of sample B using an excitation energy of 3.06 eV, where the same photogenerated carrier concentration (3.8 Â 10 18 cm -3 ) as that of 1.53 eV excitation is maintained. The photogenerated carrier concentrations are estimated using pump fluences and the absorption coefficients of the InN for 1.53 and 3.06 eV.…”

Section: -3mentioning

confidence: 99%

Carrier recombination dynamics in Si doped InN thin films

Mohanta

Jang

Lin

et al. 2011

Journal of Applied Physics

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Time-integrated and time-resolved photoluminescence (PL) of InN thin films of different background carrier concentrations are investigated. The PL formation mechanism is attributed to the “free-to-bound” transition by analyzing the time-integrated PL spectra at different pump fluences. The dependence of the PL decay time with emission energy is investigated using a theoretical model which speculates upon the carrier localization in InN thin films. The radiative lifetime, mobility edge, and carrier localization energy are obtained from the dependence of the PL decay time on emission energy and are studied at different background carrier concentrations. The effect of intervalley scattering between the Γ1 and Γ3 valley on the radiative lifetime, mobility edge, and carrier localization energy is discussed. The longer radiative lifetime and smaller values of the mobility edge and localization energy for 3.06 eV excitation are observed than that for the 1.53 eV excitation due to the intervalley scattering process.

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Concentration dependence of carrier localization in InN epilayers

Cited by 27 publications

References 15 publications

InN layers grown by MOCVD on substrates

InN layers grown by MOCVD on substrates

Carrier dynamics and related electronic band properties of InN films

Carrier recombination dynamics in Si doped InN thin films

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