Superlattices and Microstructures volume 45, issue 1, P1-7 2009 DOI: 10.1016/j.spmi.2008.10.033 View full text
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Chengxiang Li, Qingyuan Meng

Abstract: a b s t r a c tThe interactions between the 60 • shuffle dislocation and two different types of vacancy defects in silicon are separately studied via the molecular dynamics simulation method. The Stillinger-Weber potential is used to describe the atomic interactions. The results show that the dislocation slip velocity will decrease due to the interaction with the vacancy cluster (V 6 ). The simulation also reveals that the divacancy will be absorbed by the dislocation. Meanwhile, a climbing of the dislocation…

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