2022 IEEE International Symposium on Circuits and Systems (ISCAS) 2022
DOI: 10.1109/iscas48785.2022.9937781
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Compute-In-Memory Using 6T SRAM for a Wide Variety of Workloads

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Cited by 3 publications
(1 citation statement)
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“…The DW6T SRAM cells, which are modified from compact 6T foundry bitcells with no area increase, store the signed 4b weights for calculation. Utilization of the dual-wordline structure reduces power consumption and write-disturb issue [24] during the computation process. The inputs for calculation are given in the timing domain, produced by an on-chip simple and robust pulse generator.…”
Section: Introductionmentioning
confidence: 99%
“…The DW6T SRAM cells, which are modified from compact 6T foundry bitcells with no area increase, store the signed 4b weights for calculation. Utilization of the dual-wordline structure reduces power consumption and write-disturb issue [24] during the computation process. The inputs for calculation are given in the timing domain, produced by an on-chip simple and robust pulse generator.…”
Section: Introductionmentioning
confidence: 99%