Computational analysis of the effect of the surface defect layer (SDL) properties on Cu(In,Ga)Se2-based solar cell performances

Ouédraogo, S.; Zougmoré, François; Ndjaka, J.M.B.

doi:10.1016/j.jpcs.2014.01.010

Cited by 28 publications

(16 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This work is a continuation of our previous paper, in which baseline parameters set for numerical simulation Cu(In,Ga)Se 2 in agreement with the experimental results was proposed [14]. In this work, only the buffer layer properties have been changed.…”

Section: Methodsmentioning

confidence: 60%

Comprehensive Analysis of CuIn1-xGaxSe2 Based Solar Cells with Zn1-yMgyO Buffer Layer

Ouédraogo¹,

Kébré²,

Ngoupo³

et al. 2020

MSA

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 60%

Comprehensive Analysis of CuIn1-xGaxSe2 Based Solar Cells with Zn1-yMgyO Buffer Layer

Ouédraogo¹,

Kébré²,

Ngoupo³

et al. 2020

MSA

View full text Add to dashboard Cite

“…In the conventional cell structure [Fig. 1(a)] [13], a thin Surface Defect layer (SDL) is founded at the CdS/CIGS interface. This layer is replaced by P+ layer, increase the recombination phenomena at the CdS/CIGS interface deteriorates the electrical parameters of the cell [14].…”

Section: Methodsmentioning

confidence: 99%

Junction configurations and their impacts on Cu(In,Ga)Se2 based solar cells performances

Guirdjebaye

Ouédraogo

Ngoupo

et al. 2019

Opto-Electronics Review

Self Cite

View full text Add to dashboard Cite

One dimension solar cells simulator package (SCAPS) is used to study the possibility of carrying out thin CIGS solar cells with high and stable efficiency. In the first step, we modified the conventional ZnO:B/i-ZnO/CdS/SDL/CIGS/Mo structure by substituting the SDL layer with the P + layer, having a wide bandgap from 1 to l.12 eV. Then, we simulated the J-V characteristics of this new structure and showed how the electrical parameters are affected. Conversion efficiency of 18.46% is founded by using 1.1 m of P + layer thickness. Secondly, we analyze the effect of increase thickness and doping density of CIGS, CdS and P + layers on the electric parameters of this new structure. We show that only the short-circuit current density (J SC ) and efficiency are improved, reaching respectively 34.68 mA/cm 2 and 18.85%, with increasing of the acceptors density. Finally, we introduced 10 nm of various electron reflectors at the CIGS/Mo interface in the new structure to reduce the recombination of minority carriers at the back contact. High conversion efficiency of 23.34% and better stability are obtained when wide band-gap BSF is used.

show abstract

“…In the conventional structure, the n-type CdS buffer layer is inserted between the ZnO window layer and p-type CIGS absorber layer to make a high quality of p-n junction in the interface [27]. In the proposed structure we have inserted a BSF layer based on μc-Si:H between the back contact Molybdenum (Mo) and the CIGS absorber layer.…”

Section: Device Structure and Simulationmentioning

confidence: 99%

Improving the efficiency of CIGS solar cells by inserting a BSF µc-Si:H layer

Zouache

Bouchama

djedoui

et al. 2022

Preprint

View full text Add to dashboard Cite

In this paper, we present a simulation study of Cu(In,Ga)Se 2 (CIGS) based solar cell using 2DSILVACO Atlas simulator under AM1.5G illumination spectrum and standard temperature of 300K. The effects of CIGS absorber layer parameters such as CIGS absorber thickness, the doping and the defects concentrations are studied numerically to improve the performance of CIGS cell. The obtained efficiency of the conventional cell is 23.39% with optimal CIGS absorber layer thickness of about 5 μm. In order to improve the efficiency of the solar cells, a back surface field (BSF) based on hydrogenated microcrystalline silicon μc-Si:H(p + ) layer has been inserted between the back contact (Mo) and the CIGS absorber layer. The obtained results show that the efficiency of CIGS solar cells is increased by the insertion of μc-Si:H(p + ) BSF layer. The proposed cell was found to give an efficiency of 23.42% using only an optimal CIGS thickness of about 1.5 μm and 10 nm for μc-Si:H(p + ) BSF layer.

show abstract

Computational analysis of the effect of the surface defect layer (SDL) properties on Cu(In,Ga)Se2-based solar cell performances

Cited by 28 publications

References 27 publications

Comprehensive Analysis of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Based Solar Cells with Zn<sub>1-y</sub>Mg<sub>y</sub>O Buffer Layer

Comprehensive Analysis of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Based Solar Cells with Zn<sub>1-y</sub>Mg<sub>y</sub>O Buffer Layer

Junction configurations and their impacts on Cu(In,Ga)Se2 based solar cells performances

Improving the efficiency of CIGS solar cells by inserting a BSF µc-Si:H layer

Contact Info

Product

Resources

About

Computational analysis of the effect of the surface defect layer (SDL) properties on Cu(In,Ga)Se2-based solar cell performances

Cited by 28 publications

References 27 publications

Comprehensive Analysis of CuIn&lt;sub&gt;1-x&lt;/sub&gt;Ga&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;2&lt;/sub&gt; Based Solar Cells with Zn&lt;sub&gt;1-y&lt;/sub&gt;Mg&lt;sub&gt;y&lt;/sub&gt;O Buffer Layer

Comprehensive Analysis of CuIn&lt;sub&gt;1-x&lt;/sub&gt;Ga&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;2&lt;/sub&gt; Based Solar Cells with Zn&lt;sub&gt;1-y&lt;/sub&gt;Mg&lt;sub&gt;y&lt;/sub&gt;O Buffer Layer

Junction configurations and their impacts on Cu(In,Ga)Se2 based solar cells performances

Improving the efficiency of CIGS solar cells by inserting a BSF µc-Si:H layer

Contact Info

Product

Resources

About

Comprehensive Analysis of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Based Solar Cells with Zn<sub>1-y</sub>Mg<sub>y</sub>O Buffer Layer

Comprehensive Analysis of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Based Solar Cells with Zn<sub>1-y</sub>Mg<sub>y</sub>O Buffer Layer