Comprehensive Study of the Growth Mechanism and Photoelectrochemical Activity of a BiVO₄/Bi₂S₃ Nanowire Composite

Abstract

A BiVO4/Bi2S3 composite comprising Bi2S3 nanowires on top of a BiVO4 film was prepared via hydrothermal reaction. Because additional Bi3+ ions were not delivered during the reaction, BiVO4 served as the Bi3+ ion source for the development of Bi2S3. A detailed growth mechanism of the nanowire was elucidated by an analysis of the concentration gradient of Bi3+ and S2– ions during the reaction. The in situ growth was followed by the etching of BiVO4 to Bi3+ and VO4 3– ions and regrowth to Bi2S3, which resulted in the rapid evolution of nanowires on the BiVO4 substrate. The fabricated BiVO4/Bi2S3NW composite exhibited an improved photoelectrochemical activity compared to other Bi2S3 samples. The improved efficiency was mainly attributed to both improved charge separation and effective adhesion obtained by the in situ growth.

Synergistic defect- and interfacial-engineering of a Bi2S3-based nanoplate network for high-performance photoelectrochemical solar water splitting

“…is about $1.8 and $2.9 times higher than that of v-Bi 2 S 3 (3.8 mA cm À2 ) and i-Bi 2 S 3 (2.4 mA cm À2 ), which is the highest one for Bi 2 S 3 based electrode up to date. [43][44][45][46][47] In addition, the onset potential of v-Bi nanoparticle catalyst on the electrode surface decreases the kinetic barrier for charge transfer across the electrode-electrolyte interface, providing a more efficient transfer of holes in the PEC water oxidation. 7 The incident photon-to-current conversion efficiency (IPCE) of the v-Bi 2 S 3 /Co 3 O 4 at 1.23 V vs. RHE is $85%, at 420 nm (Fig.…”

“…It is shown that v-Bi 2 S 3 /Co 3 O 4 produced the highest photocurrent density in Na 2 SO 4 (J H 2 O ) electrolyte among the three samples, indicating the best PEC performance of v-Bi 2 S 3 /Co 3 O 4 . At 1.23 vs. RHE under the simulated AM 1.5G illumination, the J H 2 O of v-Bi 2 S 3 /Co 3 O 4 (7.0 mA cm À2) is about $1.8 and $2.9 times higher than that of v-Bi 2 S 3 (3.8 mA cm À2 ) and i-Bi 2 S 3 (2.4 mA cm À2 ), which is the highest one for Bi 2 S 3 based electrode up to date [43][44][45][46][47]. In addition, the onset potential of v-Bi 2 S 3 /Co 3 O 4 is negatively shied in Na 2 SO 4 electrolyte, demonstrating the introduction of Co 3 O 4…”

A Novel Artificial Neuron-Like Gas Sensor Constructed from CuS Quantum Dots/Bi2S3 Nanosheets

“…As displayed in Fig. 4 a, two separated peaks in the Bi 4f XPS spectrum at 158.3 and 163.6 eV are 4f 7/2 and 4f 5/2 hybridized orbitals of the Bi 4f orbital energy level for BC-5 sample, respectively [ 33 ]. Compared with bare Bi 2 S 3 NSs, the peak position shifts to the high binding energy, indicating that the electron density on the Bi 2 S 3 surface in BC-5 nanocomposites is reduced.…”

Selective Electrochemical Sensing Platform Based on the Synergy between Carbon Black and Single-Crystalline Bismuth Sulfide for Rapid Analysis of Antipyretic Drugs

“…Hong et al have extensively studied the photoelectrochemical action with a BiVO 4 /Bi 2 S 3 composite that revealed a band gap of 1.35 eV, which is more favorable for photovoltaic conversion. 5 In the recent past, transition-metal sulfides of Bi 2 S 3 have attracted interest in sensing applications due to their low cost, nontoxicity, biocompatibility, and sensing ability. 6 One-dimensional (1D) materials such as nanoribbons, nanotubes, nanowires, and nanorods based on Bi 2 S 3 and their catalytic ability have attracted more attention in recent decades for electrochemical sensor applications.…”

“…Bismuth sulfide (Bi 2 S 3 ) is related to the metal chalcogenide group, particularly A 2 V B 3 VI (A = As, Sb, and Bi; B = S, Se, and Te), and has attracted wide attention as a potential electrode material in different fields with a direct band gap of E g = 1.3–1.7 eV. − The semiconducting material of Bi 2 S 3 is a very active electron transport agent in photoelectrochemical activity. Hong et al have extensively studied the photoelectrochemical action with a BiVO 4 /Bi 2 S 3 composite that revealed a band gap of 1.35 eV, which is more favorable for photovoltaic conversion . In the recent past, transition-metal sulfides of Bi 2 S 3 have attracted interest in sensing applications due to their low cost, nontoxicity, biocompatibility, and sensing ability .…”