“…Employing SiC MOSFETs allows for a low step time (i.e. the time each intermediate voltage level appears during the staggered switching transition, see Figure 1) of
(several
s would be required in the case of IGBTs due to the slower switching speeds and hence longer interlock delay times [
27, 30]). Further, considering a permissible maximum peak‐to‐peak capacitor voltage variation of
(20% of the nominal peak cell voltage
), a small cell capacitance of about
results.…”