2010
DOI: 10.1103/physrevb.81.144520
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Competition between superconductivity and weak localization in metal-mixed ion-implanted polymers

Abstract: We study the effects of varying the preimplant film thickness and implant temperature on the electrical and superconducting properties of metal-mixed ion-implanted polymers. We show that it is possible to drive a superconductor-insulator transition in these materials via control of the fabrication parameters. We observe peaks in the magnetoresistance and demonstrate that these are caused by the interplay between superconductivity and weak localization in these films, which occurs due to their granular structur… Show more

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Cited by 3 publications
(5 citation statements)
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“…The disorder effects are likely to inhibit the superconducting transition as well, as it was predicted theoretically 28 and found experimentally in Nd 2−x Ce x CuO 4+δ 29 and Nd-based 123-cuprates 30 ; disorder effects were claimed as the origin of the absence of superconductivity in Ba 2 IrO 4 , where a metal-insulator transition was induced by pressure 31 . The competition between superconductivity and weak localization had been observed previously in various systems 32 .…”
Section: Phasesupporting
confidence: 63%
“…The disorder effects are likely to inhibit the superconducting transition as well, as it was predicted theoretically 28 and found experimentally in Nd 2−x Ce x CuO 4+δ 29 and Nd-based 123-cuprates 30 ; disorder effects were claimed as the origin of the absence of superconductivity in Ba 2 IrO 4 , where a metal-insulator transition was induced by pressure 31 . The competition between superconductivity and weak localization had been observed previously in various systems 32 .…”
Section: Phasesupporting
confidence: 63%
“…It is found to be 1.01 T from WHH and 1.33 T from GL theory in the IP region, as shown in the inset of figure 2(d). The observed negative magnetoresistance (NMR) [33,34] in device D3 from 3.3 to 3.6 K is shown in figure 2(c). Similar NMR data for D2 at low temperatures are shown in figure S3(a), showing IP behavior up to 2.5 K,; above this temperature WAL signatures similar to pristine SnTe are seen.…”
Section: Results and Analysismentioning
confidence: 99%
“…Beam accelerating potentials of 5, 10, 15 and 20 kV were used in an effort to best match the beam's particle energy to our previous studies where a 50 keV N + beam was used. Implantation was conducted to doses of 1 10 15 , 510 15 and 1 10 16 ions cm…”
Section: Methodsmentioning
confidence: 99%
“…Our approach overcomes the anisotropy and poor control that occur by tuning the pre-implant metal thickness and using a lighter element ion-beam instead. [14,15] The mapping of the conductivity to the implantation parameters is not straightforward due to the interplay between sputtering and graphitization, processes with different beam energy and dose profiles. However, the optical absorp- .…”
Section: à2mentioning
confidence: 99%
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