Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm

Markus, A.; Fiore, Andrea; Ganière, JD; Oesterle, U.; Chen, JX; Deveaud, B.; Ilegems, M.; Riechert, H.

doi:10.1063/1.1447595

Cited by 48 publications

(20 citation statements)

References 20 publications

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“…First, two emission lines dominate the spectrum: the exciton (X) and biexciton (BX). As previously demonstrated [4][5][6][7][8][9], the identification follows from the power dependence of the integrated PL intensity. On average the exciton intensity is proportional to P 0.7±0.1 and the BX to P…”

Section: Resultsmentioning

confidence: 96%

Time resolved measurements on low‐density single quantum dots at 1300 nm

Zinoni¹,

Alloing

Monat

et al. 2006

Phys. Status Solidi (c)

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Published online zzz PACS 78.67. Hc, 78.66.Fd, 78.47.+p We present time integrated and time resolved measurements on single In/As quantum dots (QD) emitting at 1300nm, at 10K, embedded in a planar microcavity. We clearly identify a standard spectroscopic signature from single QDs and compare the exciton line width and biexciton (BX) binding energy for several QDs. We present this data for QDs spatially selected by etched mesas and metallic apertures. Time resolved photoluminescence (PL) from single electron-hole recombination in the ground state of the QD is investigated as a function of excitation power and temperature. The measurements reveal the presence of a background emission that delays the PL of excitons in the ground state.1 Introduction Efficient generation of single photons on demand at telecom wavelength (1310nm and 1550nm) is crucial for quantum key distribution (QKD). The optical properties of single quantum dots (QDs) have the potential for satisfying the requirements of a convenient single photon source: QDs can be grown in conventional semiconductor epitaxial systems and the nature of the 3D confinement of the wavefunction generates atomic-like spectral features. A single QD can be populated by several electron-hole pairs (excitons), each recombining to emit a photon. Due to Coulomb interactions originating from the strong charge confinement, the energy levels are shifted and each transition can be spectrally isolated to produce a single photon source. QDs that emit in the spectral range where silicon technology is used have been extensively studied [1][2][3]. However, the attenuation in optical fibers below 1270nm restricts the potential use of these QDs in QKD applications. Working with QDs emitting in the telecom window presents several challenges: first the QD emission has to be red shifted while maintaining a low spatial density-a difficult combination of requirements for conventional epitaxial growth methods. Second, the single photon detection technology for the near infrared is still in its infancy: noise levels, quantum efficiency, and temporal response are considerably poorer when compared to the single photon detection modules operating below 1000nm. Recently we have demonstrated [4] a technique for achieving ultra low areal densities (1-2 dots/µm2) and large dot sizes for emission in the 1300nm band. In combination with ultra small light-emitting diode structures [5][6], they could lead to electrically pumped single photon sources. These QDs present several distinct features, as compared to widely studied short-wavelength QDs, such as larger confinement energy, higher strain fields, and consequently different electron-hole wave functions. Time-resolved studies on single exciton transitions provide important information on the dynamics of the electron-hole relaxation into these new QDs and may change the way in which QD based single photon devices are operated. In this work we compare the photoluminescence from the ground state of the QDs spatially isolated by two different methods...

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Section: Resultsmentioning

confidence: 96%

Time resolved measurements on low‐density single quantum dots at 1300 nm

Zinoni¹,

Alloing

Monat

et al. 2006

Phys. Status Solidi (c)

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“…The least squares fits are calculated from the convolution between a two ͑one͒ term exponential decay function for the X ͑BX͒ and the setup response function ͑SRF͒. Due to the mismatch between the APDs spectral response and laser wavelength, the SRF was measured with a sample of GaNInAs quantum wells, emitting at 1300 nm at room temperature, with a lifetime previously measured to be 50 ps, 22 which is well below the temporal resolution of the detector ͑600 ps͒. The error on the fits is estimated at ±0.2 ns.…”

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confidence: 99%

Time-resolved and antibunching experiments on single quantum dots at 1300nm

Zinoni

Alloing

Monat

et al. 2006

Applied Physics Letters

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“…In their work, the results were interpreted as the simultaneous thermal emission of electron-hole pairs out of the quantum well into barriers, in analogy to thermal activation of deep localized excitons to shallow localized states in our case. As the temperature is further increased above 90 K, when the localized excitons have enough thermal energy to populate the free exciton states, they will gradually have shorter lifetime due to coherent nature of free excitons [15]. Furthermore more non-radiative channels become available at high temperatures leading to observed shorter total PL decay time.…”

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confidence: 98%

Time‐resolved photoluminescence and steady‐state optical studies of GaInNAs and GaInAs single quantum wells

Sun

Lombez

Braun

et al. 2007

Phys. Status Solidi (c)

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Time-resolved photoluminescence spectroscopy is used to investigate carrier dynamics of Ga 1-x In x N y As 1-y (x ~ 0.33, y ~ 0.01) single quantum well (QW) structures. PL spectra measured as a function of temperature together with the PL decay times at wavelengths around and below the PL peak energy are used to determine de-trapping activation energies and time constants. The results are interpreted in terms of simultaneous thermal excitation of deep localized excitons to shallow localized states. According to the model, with increasing temperatures, localized excitons gain enough thermal energy to populate the free exciton states in quantum well with shorter lifetimes due to coherent nature of free excitons. In addition, at temperatures around and above 80 K, more non-radiative channels become available to compete with the radiative processes leading to shorter time constants. 1 Introduction Dilute nitride alloys (GaAsN, InGaAsN and GaAsSbN) have recently attracted considerable attention as promising materials for long wavelength laser diodes as well as high efficient multijunction solar cells. The incorporation of a low content of nitrogen (< 2%) in the host material induces dramatic changes in the optical and electronic properties [1][2][3]. However, the compositional nonuniformity of nitrogen and indium induces a spatial distribution of different sized clusters hence to the associated states [4,5]. These cluster states reflect potential fluctuations that are inherent in the disordered systems resulting in the creation of intrinsic regions of strong localization. Strongly localized states dominate radiative recombination dynamics at low temperatures. In this contribution, we report on the time resolved photoluminescence (TRPL) studies of sequentially grown GaInNAs/GaAs and GaInAs/GaAs single quantum wells. We interpret our results in terms of localized excitons in nitrogen containing quantum well but free exciton recombination in nitrogen free well.

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Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm

Cited by 48 publications

References 20 publications

Time resolved measurements on low‐density single quantum dots at 1300 nm

Time resolved measurements on low‐density single quantum dots at 1300 nm

Time-resolved and antibunching experiments on single quantum dots at 1300nm

Time‐resolved photoluminescence and steady‐state optical studies of GaInNAs and GaInAs single quantum wells

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