Comparison of MOCVD- and ALD-Deposited $ \hbox{HfZrO}_{4}$ Gate Dielectrics for 32-nm High-Performance Logic SOI CMOS Technologies

Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm CMOS High Performance Logic SOI Technologies

“…We have recently reported the electrical results of 32nm CMOS high performance logic transistors on SOI substrates having 18Å, 21Å, 25Å and 29Å thick HfZrO 4 gate dielectrics deposited with MOCVD and ALD (Hf/Zr ratio 1:1) [12]. HfZrO 4 dielectrics are demonstrated to be equivalent in terms of gate leakage current, capacitance equivalent thickness, threshold voltage, and performance as well as reliability behavior (Bias Temperature Instability and Hot Carrier Injection).…”

“…In the scientific literature up to now atomic layer deposition (ALD) [7][8][9][10] as well as physical vapor deposition (PVD) [11] have been explored to form the HfZrO 4 layers. As metal-organic chemical vapor deposition (MOCVD) stands out due to excellent manufacturability and high throughputs, we have recently shown first electrical 32 nm SOI high performance logic CMOS device data of HfZrO 4 gate dielectrics deposited with MOCVD and ALD [12]. Based on the electrical data presented, a comparable behavior between ALD and MOCVD was demonstrated and particularly with regard to manufacturability and cost of ownership MOCVD was shown to be a real promising alternative in high volume manufacturing.…”

“…Recently presented electrical results [12] based on 32 nm high performance logic devices covering gate leakage current, capacitance equivalent thickness, threshold voltage, and performance as well as reliability (bias temperature instability and hot carrier injection) data are extended in this work. A determination of the interface trap density by means of charge pumping and the correlation with long channel mobility will be shown.…”

“…Besides the impact of a high temperature annealing on physical properties has been explored by directly comparing annealed and as deposited HfZrO 4 samples via atomic force microscopy (AFM) and variable angle spectroscopic ellipsometry (VASE). Recently presented electrical results [12] based on 32 nm high performance logic devices covering gate leakage current, capacitance equivalent thickness, threshold voltage, and performance as well as reliability (bias temperature instability and hot carrier injection) data are extended in this work. A determination of the interface trap density by means of charge pumping and the correlation with long channel mobility will be shown.…”