Comparison of Missing Metal Defect Formation on He In-Situ and Furnace Annealed Electroplated Copper Films

Wahab, Y. Abdul; Ahmad, A.F.; Awang, Zaiki

doi:10.1109/scored.2006.4339307

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“…In last two years, although the conventional barrier, seed and ECP technology were applied to implement the wafer production, some of the products in company still suffered serious Cu void (or commonly known as missing metal [7]) defects at DD structure and the electromigration lifetime only marginally passed the target value.…”

Section: Motivationmentioning

confidence: 99%

“…They can be classified as void or missing metal, abnormal Cu growth, and particles. The most serious defect type is Cu void defects, which are formed due to the plated Cu failed to fill completely in the metal line and via gap[7,11,48, 49].Company has defined three types of Cu void defects as shown inFig. 2.4: dash metal defect, unfilled defect, and protrusion defect.…”

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confidence: 99%

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