Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

Alibart, Fabien; Drouhin, O. Durand; Benlahsen, M.; Mühl, S.; Rodil, S.E.; Camps, E.; Escobar-Alarcón, L.

doi:10.1016/j.apsusc.2008.02.108

Cited by 17 publications

(11 citation statements)

References 28 publications

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“…There are several reported methods of preparing nitrogen‐doped carbons using different sources of nitrogen. For example, Ismagilov et al used ammonia gas to serve as nitrogen source during the decomposition of ethylene gas on a 65Ni‐25Cu‐10Al 2 O 3 catalyst, while Alibart et al prepared N‐doped carbon thin‐films by different sputtering techniques in a mixed Ar/N 2 atmosphere. Furthermore, a helium atmosphere loaded with pyrrole gas was used during an arc discharge vaporization of carbon rods leading to N‐doped carbon with improved conductivity …”

Section: Introductionmentioning

confidence: 99%

“…In the case of N‐doped carbons, the enhancement of conductivity and growth of the graphene stacks with increasing carbonization temperature is counteracted by the release of nitrogen: the higher the carbonization temperature the stronger the volatilization of nitrogen containing molecules from the material. [13a] Nitrogen being integrated into the polyaromatic structure influences the overall conductivity, as it is known that inserted nitrogen modifies the electronic band structure of various carbon morphologies such as flakes,[3c] thin films, fibers, and carbon nanotubes (CNTs) . For the latter, it was demonstrated that the density of states of charge carriers D ( E F ) at the Fermi level increases through appropriate nitrogen doping.…”

Section: Introductionmentioning

confidence: 99%

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Nitrogen-Doped Carbon Electrodes: Influence of Microstructure and Nitrogen Configuration on the Electrical Conductivity of Carbonized Polyacrylonitrile and Poly(ionic liquid) Blends

Einert

Wessel

Badaczewski

et al. 2015

Macromol. Chem. Phys.

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In this paper, the preparation of nitrogen-doped carbon fibers and thin films from mixtures of polyacrylonitrile (PAN) and a poly(ionic liquid) (PIL) by electrospinning and dip-coating is presented, respectively, followed by carbonization at distinct temperatures. The poor processability of the PIL into sub-micrometer fibers by electrospinning—originating from its high charge density and meanwhile low glass transition temperature—is successfully circumvented by using blends of PAN and PIL. The electrospun fiber mats exhibit a high surface-to-volume-ratio with an intrinsically macroporous through-pore structure and a uniform fiber diameter after carbonization. Physicochemical characterization of the N-doped carbons by means of scanning electron microscopy, algorithmic X-Ray diffraction analysis, nitrogen physisorption, thermogravimetry, elemental analysis, energy-dispersive X-ray, and X-ray photoelectron spectroscopy gives insight into their physical and electrical structures. Impedance measurements on carbonized PIL/PAN-blends reveal high electrical conductivities up to 320 S cm−1, which are attributed to the incorporation of predominantly quaternary-graphitic nitrogen atoms into the carbon network during carbonization. The results indicate that the electrical conductance of the N-doped carbons strongly depends on the chemical environment of the inserted nitrogen atoms, the microstructural evolution of π-conjugated carbon network—which in turn correlate with the carbonization temperature—and the chemical composition

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nitrogen-Doped Carbon Electrodes: Influence of Microstructure and Nitrogen Configuration on the Electrical Conductivity of Carbonized Polyacrylonitrile and Poly(ionic liquid) Blends

Einert

Wessel

Badaczewski

et al. 2015

Macromol. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…[20] The bnding in amorphous carbon nitride was summarized elsewhere. [21,22] There have been several reports on a-C/a-CN x thin film transistors (TFTs),…”

Section: Introductionmentioning

confidence: 99%

Probing the band structure of hydrogen-free amorphous carbon and the effect of nitrogen incorporation

Miyajima

Tison

Giusca

et al. 2011

Carbon

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“…Consequently, the shift of the Raman peaks towards lower frequencies and the decrease in the I D /I G intensity ratio can be explained by either some increase in the sp 3 bonding fraction, or the decrease in the size of the graphitic clusters [41][42][43][44]. The latter case is the one which is believed to be more likely to take place.…”

Section: Raman Spectroscopy Measurementsmentioning

confidence: 96%

Effect of Nitrogen Plasma Afterglow on Amorphous Carbon Nitride Thin Films Deposited by Laser Ablation

et al. 2011

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By employing pulsed laser deposition, amorphous carbon nitride (a-CN x ) thin films, were prepared on unheated Si (100). Investigation of compositional and structural modifications induced by microwave nitrogen plasma afterglow on amorphous carbon nitride thin films, has been carried out in the range of nitrogen pressure 10-1000 Pa. The role of nitrogen plasma afterglow on the physicochemical and structural characteristics of a-CN x was explored using the diagnostic techniques: Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Upon analyzing the Raman and X-ray photoelectron spectra, it is concluded that employing nitrogen plasma afterglow during the films deposition favors, in general, the increase in nitrogen content and the formation of sp 2 bonding in the a-CN x films. The analysis of scanning electron and atomic force microscopy images demonstrated that the films had a granular structure formed from particles coalesced together into cauliflower-like clusters and the particles size increased by increasing nitrogen pressure. A 2D atomic force microscopy line profile measurements provide evidence to a decrease in size of clusters using nitrogen plasma afterglow which could be due to the annihilation of excess vacancies and/or the elimination of grain boundaries. These analyses were found to be quite reliable to help understand the effects of microwave nitrogen plasma afterglow on amorphous carbon nitride thin films.

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Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

Cited by 17 publications

References 28 publications

Nitrogen-Doped Carbon Electrodes: Influence of Microstructure and Nitrogen Configuration on the Electrical Conductivity of Carbonized Polyacrylonitrile and Poly(ionic liquid) Blends

Nitrogen-Doped Carbon Electrodes: Influence of Microstructure and Nitrogen Configuration on the Electrical Conductivity of Carbonized Polyacrylonitrile and Poly(ionic liquid) Blends

Probing the band structure of hydrogen-free amorphous carbon and the effect of nitrogen incorporation

Effect of Nitrogen Plasma Afterglow on Amorphous Carbon Nitride Thin Films Deposited by Laser Ablation

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