Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices

Han, Di; Li, Silong; Wu, Yuping; Choi, Woo-Young; Sarlioglu, Bulent

doi:10.1109/tie.2017.2681968

Cited by 207 publications

(59 citation statements)

References 29 publications

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“…Also, it generates an unwanted shaft voltage and bearing currents (which induce excessive motor heating, audible noise, vibration, and common mode current) through parasitic capacitance and inductance inside the motor. As a consequence, an efficient system operation cannot be achieved due to its maintenance cost as well as a decrease of lifetime [11][12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

“…A long cable between the VFDs and motor also has a non-negligible effect on the performance and reliability of the motor considering the practical installation environments such as deep sea and manufacturing plants. Voltage reflection, which is a well-known phenomenon, occurs where there is an impedance mismatch between the VFDs and the motor [18][19][20][21]. It would cause undesired voltage amplification (nearly twice the magnitude of the switching voltage) at the motor terminal and become worse as the cable length increases.…”

Section: Introductionmentioning

confidence: 99%

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Analysis and Design of a Sine Wave Filter for GaN-Based Low-Voltage Variable Frequency Drives

Baek

Choi

et al. 2020

Electronics

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Gallium nitride (GaN) devices have been widely adopted to achieve high efficiency and high power density as alternative solutions to silicon devices. When the GaN power devices are used for variable frequency drive (VFD) systems, the high dv/dt pulses at the motor terminal, which induce shaft voltage and common mode current, should be carefully considered to ensure system reliability. Although the high dv/dt issues can be mitigated with a dv/dt filter method, it leads to performance degradation depending on cable length. Meanwhile, a matrix converter also becomes a next-generation power converter for the VFDs which has a regeneration capability and unity power factor. Thus, this paper discusses the GaN-based matrix converter for the VFD as a study case considering the motor terminal voltage quality and the common mode current. Also, a sine wave filter is adopted to cope with the terminal voltage quality irrespective of cable length. The optimized design procedure of the sine filter considers practical issues. Experimental results are presented to suggest a suitable solution for the GaN-based VFDs in accordance with the cable length.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis and Design of a Sine Wave Filter for GaN-Based Low-Voltage Variable Frequency Drives

Baek

Choi

et al. 2020

Electronics

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“…Then, the elementary switching losses are analyzed based on the measured data. Finally, on the buck converter level, the overall efficiency and EMI-related common-mode current performance [19,20] is compared.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

et al. 2019

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

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“…Conducted emission (CE) is the EMI, which is created by the object and is transmitted through the power line. This can potentially cause problems since power cords are connected to the entire power distribution network [14,15]. The CE is categorized as common-mode (CM) and differential-mode (DM) [14,15].…”

Section: Introductionmentioning

confidence: 99%

“…This can potentially cause problems since power cords are connected to the entire power distribution network [14,15]. The CE is categorized as common-mode (CM) and differential-mode (DM) [14,15]. The CM originates from the line and neutral wires of the same magnitude with a direction to the ground wire.…”

Section: Introductionmentioning

confidence: 99%

The Conducted Emission Attenuation of Micro-Inverters for Nanogrid Systems

Jettanasen

Ngaopitakkul

2019

Sustainability

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Road lighting systems require a significant amount of electric energy. To compensate for the utilized energy, the concept of a nanogrid road lighting system is presented. A solar panel is installed on the top of a lighting pole to generate electric power. In this research, a photovoltaic simulator (PV simulator), which is used to simulate solar behavior such as current, voltage, and power based on temperature and solar irradiance levels, is employed to replace a solar panel. In the nanogrid system, grid-connected and stand-alone micro-inverters are employed to convert the electric power. The inverters comprise switching devices that can generate electromagnetic interference (EMI) when operating, which is harmful to the grid system and the electrical equipment. In general, EMI has been studied and reduced in electrical appliances, which only receive electric power. However, for the nanogrid system, which supplies electricity to the grid system, there is less study on the EMI topic because the usage is still not widespread. In the future, the nanogrid system will be widely used delivering high power directly into the electrical grid system. Therefore, the study and attenuation of EMI in the nanogrid system are very promising. Conducted emission (CE) is one form of EMI that flows through a cable connecting several appliances in the frequency range of 150 kHz to 30 MHz. CE of grid-connected and stand-alone micro-inverters have high levels in the low-frequency range between 150 kHz–5 MHz and then decreases steadily. CE attenuation is important for this inverter in a solar power system. This research studies the effect of CE mitigation on the nanogrid system. The result is compared with the Comité International Spécial des Perturbations Radio (CISPR) 14-1 standard. Finally, the passive EMI filter can reduce CE and meets the CISPR 14-1 standard.

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Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices

Cited by 207 publications

References 29 publications

Analysis and Design of a Sine Wave Filter for GaN-Based Low-Voltage Variable Frequency Drives

Analysis and Design of a Sine Wave Filter for GaN-Based Low-Voltage Variable Frequency Drives

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

The Conducted Emission Attenuation of Micro-Inverters for Nanogrid Systems

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